BioMolecular Integrated Circuits, Center for (CBIC)

Research output

Research output per year 1996 2010 2018 2019

• 36 Article
• 23 Conference contribution
• 1 Conference article

Research output per year

Research output per year

Search results

• 2018

  Multiscale Coupled Electro-Thermal Simulations of Electron Devices

  Merrill, K. & Saraniti, M., Dec 27 2018, THERMINIC 2018 - 24th International Workshop on Thermal Investigations of ICs and Systems, Proceedings. Institute of Electrical and Electronics Engineers Inc., 8593320. (THERMINIC 2018 - 24th International Workshop on Thermal Investigations of ICs and Systems, Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Electron-Phonon Scattering 100%
  • Electron devices 81%
  • thermal simulation 72%
  • Thermal Conductivity 49%
  • Heat 39%
  1 Scopus citations
• 2017

  Electro-thermal characterization of GaN HEMT on Si through self-consistent energy balance-cellular Monte Carlo device simulations

  Latorre-Rey, A. D., Merrill, K., Albrecht, J. D. & Saraniti, M., Dec 26 2017, 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. Institute of Electrical and Electronics Engineers Inc., p. 1-4 4 p. (2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017; vol. 2017-January).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Phonons 100%
  • High electron mobility transistors 73%
  • Energy balance 66%
  • high electron mobility transistors 65%
  • Acoustic Phonon 55%
  4 Scopus citations

• Generation of hot electrons in GaN HEMTs under RF Class A and AB PAs

  Latorre-Rey, A. D., Albrecht, J. D. & Saraniti, M., Aug 1 2017, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999436

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Hot electrons 100%
  • High electron mobility transistors 77%
  • Power amplifiers 44%
  • Hot carriers 29%
  • Distribution functions 23%
  6 Scopus citations
• 2016

  A fully online accredited undergraduate electrical engineering program

  Phillips, S. & Saraniti, M., Jun 26 2016, 2016 ASEE Annual Conference and Exposition. American Society for Engineering Education, Vol. 2016-June.

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Electrical engineering 100%
  • Students 65%
  • Accreditation 26%
  • Curricula 10%
  • Industry 8%
  5 Scopus citations

• Carrier relaxation and impact ionization in core-shell III-V nanowires

  Hathwar, R., Saraniti, M. & Goodnick, S., Nov 21 2016, 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., p. 832-835 4 p. 7751540

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Impact Ionization 100%
  • Impact ionization 88%
  • Nanowires 70%
  • Relaxation 52%
  • Nanowire 49%
• 2014

  Full band monte carlo simulation of In_0.7Ga_0.3As junctionless nanowire field effect transistors

  Hathwar, R., Saraniti, M. & Goodnick, S., Nov 26 2014, Proceedings of the IEEE Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., p. 645-649 5 p. 6968090. (Proceedings of the IEEE Conference on Nanotechnology).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Field-effect Transistor 100%
  • Nanowires 97%
  • Field effect transistors 60%
  • Monte Carlo Simulation 49%
  • nanowires 45%
  3 Scopus citations

• Terahertz devices and device modeling

  Soligo, R., Saraniti, M. & Goodnick, S., 2014, Micro- and Nanotechnology Sensors, Systems, and Applications VI. SPIE, 90830B. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 9083).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Electron Mobility 100%
  • High electron mobility transistors 96%
  • high electron mobility transistors 86%
  • UHF devices 86%
  • Electron 85%

• X-parameters and efficient physical device simulation of mm-wave power transistors with harmonic loading

  Guerra, D., Saraniti, M., Ferry, D. K. & Goodnick, S., 2014, 2014 IEEE MTT-S International Microwave Symposium, IMS 2014. Institute of Electrical and Electronics Engineers Inc., 6848583. (IEEE MTT-S International Microwave Symposium Digest).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Wave power 100%
  • Power transistors 97%
  • transistors 59%
  • harmonics 52%
  • simulation 28%
  1 Scopus citations
• 2013

  Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs

  Marino, F. A., Tierney, B., Akis, R., Saraniti, M. & Goodnick, S., 2013, 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. p. 67-70 4 p. 6721009. (Proceedings of the IEEE Conference on Nanotechnology).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Semiconductor quantum wells 100%
  • Field effect transistors 68%
  • Monte Carlo Method 67%
  • Field Effect 63%
  • Scattering 60%

• Linearity analysis of millimeter wave GaN power transistors through X-parameters and TCAD device simulations

  Guerra, D., Saraniti, M., Ferry, D. K. & Goodnick, S., Dec 1 2013, 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013. 6697725. (IEEE MTT-S International Microwave Symposium Digest).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Wave power 100%
  • Power transistors 97%
  • millimeter waves 74%
  • Millimeter waves 74%
  • linearity 72%
  4 Scopus citations
• 2012

  Cellular Monte Carlo study lateral scaling impact of on the DC-RF performance of high-power GaN HEMTs

  Soligo, R., Guerra, D., Ferry, D. K., Goodnick, S. & Saraniti, M., 2012, 2012 15th International Workshop on Computational Electronics, IWCE 2012. 6242863. (2012 15th International Workshop on Computational Electronics, IWCE 2012).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Power HEMT 100%
  • High Power 72%
  • Monte Carlo Study 66%
  • Lateral 66%
  • Scaling 51%
  3 Scopus citations

• Millimeter-wave power amplifier circuit-device simulations through coupled Harmonic Balance-Monte Carlo particle-based device simulator

  Guerra, D., Ferry, D. K., Saraniti, M. & Goodnick, S., 2012, IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium. 6258430. (IEEE MTT-S International Microwave Symposium Digest).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Wave power 100%
  • power amplifiers 88%
  • Field effect transistors 80%
  • millimeter waves 74%
  • Millimeter waves 74%
  3 Scopus citations

• Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications

  Akis, R., Soligo, R., Marino, F. A., Ferry, D. K., Goodnick, S. & Saraniti, M., 2012, 2012 12th IEEE International Conference on Nanotechnology, NANO 2012. 6322205. (Proceedings of the IEEE Conference on Nanotechnology).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Impact ionization 100%
  • Cutoff frequency 74%
  • Impact Ionization 56%
  • Transistors 54%
  • Tunnels 53%
  1 Scopus citations
• 2011

  Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

  Guerra, D., Ferry, D. K., Goodnick, S., Saraniti, M. & Marino, F. A., Nov 1 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. p. 87-90 4 p. 6035056. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Millimeter Wave 100%
  • Device Simulation 94%
  • Power HEMT 94%
  • Wave power 74%
  • Millimeter waves 55%
  3 Scopus citations

• Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent harmonic balance/cellular Monte Carlo device simulation

  Guerra, D., Marino, F. A., Ferry, D. K., Goodnick, S., Saraniti, M. & Soligo, R., 2011, 2011 International Electron Devices Meeting, IEDM 2011. p. 34.2.1-34.2.4 6131668. (Technical Digest - International Electron Devices Meeting, IEDM).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • power amplifiers 100%
  • High electron mobility transistors 98%
  • Field effect transistors 90%
  • high electron mobility transistors 87%
  • Power amplifiers 83%
  5 Scopus citations

• Terahertz-capability nanoscale InGaAs HEMT design guidelines by means of full-band Monte Carlo device simulations

  Guerra, D., Marino, F. A., Akis, R., Ferry, D. K., Goodnick, S. & Saraniti, M., 2011, 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers. p. 193-196 4 p. 5719347. (2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • High electron mobility transistors 100%
  • Electrons 43%
  • Aspect ratio 40%
  • Simulators 31%
• 2010

  Catalytic surfaces of silicon nanopores, a brownian dynamics study

  Ramaprasad, P., Goodnick, S. & Saraniti, M., 2010, 2010 14th International Workshop on Computational Electronics, IWCE 2010. p. 137-140 4 p. 5677998. (2010 14th International Workshop on Computational Electronics, IWCE 2010).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Nanopore 100%
  • Brownian Dynamics 91%
  • Nanopores 83%
  • Silicon 79%
  • Surface charge 53%

• Cellular Monte Carlo investigation of InAs and InGaAs quantum well field effect transistors

  Marino, F. A., Guerra, D., Ferry, D. K., Goodnick, S. & Saraniti, M., 2010, 2010 14th International Workshop on Computational Electronics, IWCE 2010. p. 109-112 4 p. 5678003. (2010 14th International Workshop on Computational Electronics, IWCE 2010).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • InGaAs 100%
  • Field-effect Transistor 90%
  • Quantum Well 87%
  • Semiconductor quantum wells 79%
  • Field effect transistors 54%

• Cellular Monte Carlo study of RF short-channel effects, effective gate length, and aspect ratio in GaN and InGaAs HEMTs

  Guerra, D., Akis, R., Ferry, D. K., Goodnick, S., Saraniti, M. & Marino, F. A., 2010, 2010 14th International Workshop on Computational Electronics, IWCE 2010. p. 105-108 4 p. 5678006. (2010 14th International Workshop on Computational Electronics, IWCE 2010).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • InGaAs 100%
  • Aspect Ratio 64%
  • High electron mobility transistors 59%
  • Monte Carlo Study 56%
  • Electrons 51%
  2 Scopus citations

• Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation

  Marino, F. A., Guerra, D., Goodnick, S. & Saraniti, M., Oct 20 2010, 2010 IEEE International Reliability Physics Symposium, IRPS 2010. p. 516-521 6 p. 5488779. (IEEE International Reliability Physics Symposium Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • High electron mobility transistors 100%
  • Edge dislocations 35%
• 2009

  Physical modeling of microwave transistors using a full-band/full-wave simulation approach

  Ayubi-Moak, J. S., Akis, R., Saraniti, M., Ferry, D. K. & Goodnick, S., 2009, Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 5091139. (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Gallium Arsenide 100%
  • Simulation Tool 90%
  • Finite-difference Time-domain (FDTD) 89%
  • Physical Modeling 89%
  • Microwave 80%
  2 Scopus citations
• 2002

  Towards a reliable model of ion channels: Three-dimensional simulation of ionic solutions

  Saraniti, M., Wigger, S. J., Schuss, Z. & Eisenberg, R. S., 2002, 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. Laudon, M. & Romanowicz, B. (eds.). p. 52-55 4 p. (2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ions 100%
  • Biosensors 33%
  • Physiology 33%
  • Biological systems 31%
  • Microelectronics 28%
  2 Scopus citations
• 1996

  Cellular automata for device simulation-concepts and applications

  Zandler, G., Saraniti, M., Rein, A. & Vogl, P., 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996. Institute of Electrical and Electronics Engineers Inc., p. 39-42 4 p. 865263. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Device Simulation 100%
  • MOSFET 67%
  • Cellular automata 66%
  • Cellular Automata 61%
  • Concepts 31%
  1 Scopus citations