BioMolecular Integrated Circuits, Center for (CBIC)

Research output

Research output per year 1996 2010 2018 2019

• 36 Article
• 23 Conference contribution
• 1 Conference article

Research output per year

Research output per year

Search results

• 2019

  Assessment of self-heating effects under lateral scaling of GaN HEMTs

  Latorre-Rey, A. D., Merrill, K., Albrecht, J. D. & Saraniti, M., Feb 2019, In: IEEE Transactions on Electron Devices. 66, 2, p. 908-916 9 p., 8601308.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Electric Field 77%
  • Acoustic Phonon 75%
  • Optical Phonon 68%
  • Heating 61%
  10 Scopus citations
• 2018

  A Π-Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs

  Latorre-Rey, A. D., Albrecht, J. D. & Saraniti, M., Oct 2018, In: IEEE Transactions on Electron Devices. 65, 10, p. 4263-4270 8 p., 8445694.

  Research output: Contribution to journal › Article › peer-review

  • Hot electrons 100%
  • Hot Electron 96%
  • High electron mobility transistors 77%
  • Simulation 42%
  • Distribution Function 41%
  20 Scopus citations

• Development of a numerical model for performance-based design of geosynthetic liner systems

  Kavazanjian, E., Wu, X., Arab, M. & Matasovic, N., Apr 2018, In: Geotextiles and Geomembranes. 46, 2, p. 166-182 17 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • geosynthetics 100%
  • liner 89%
  • Numerical models 66%
  • Geomembranes 61%
  • Strain 56%
  12 Scopus citations

• End-of-Life Heavy Metal Releases from Photovoltaic Panels and Quantum Dot Films: Hazardous Waste Concerns or Not?

  Brown, F. C., Bi, Y., Chopra, S., Hristovski, K., Westerhoff, P. & Theis, T. L., Jul 2 2018, In: ACS Sustainable Chemistry and Engineering. 6, 7, p. 9369-9374 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Hazardous Waste 100%
  • Heavy metals 93%
  • hazardous waste 75%
  • Quantum Dot 64%
  • Heavy Metal 61%
  18 Scopus citations

• Hydrological modeling of climate change impacts in a Tropical River Basin: A case study of the Cauto River, Cuba

  Montecelos-Zamora, Y., Cavazos, T., Kretzschmar, T., Vivoni, E., Corzo, G. & Molina-Navarro, E., Aug 25 2018, In: Water (Switzerland). 10, 9, 1135.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Soil and Water Assessment Tool model 100%
  • Climate Change 76%
  • River basins 74%
  • Cuba 72%
  • Rivers 67%
  14 Scopus citations

• Multimodel assessment of climate change-induced hydrologic impacts for a Mediterranean catchment

  Perra, E., Piras, M., Deidda, R., Paniconi, C., Mascaro, G., Vivoni, E., Cau, P., Marras, P. A., Ludwig, R. & Meyer, S., Jul 30 2018, In: Hydrology and Earth System Sciences. 22, 7, p. 4125-4143 19 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • catchment 100%
  • climate change 77%
  • climate modeling 34%
  • water budget 27%
  • hydrology 25%
  25 Scopus citations

• On the Sensitivity of Hillslope Runoff and Channel Transmission Losses in Arid Piedmont Slopes

  Schreiner-McGraw, A. P. & Vivoni, E., Jul 2018, In: Water Resources Research. 54, 7, p. 4498-4518 21 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • transmission loss 100%
  • piedmont 78%
  • hillslope 75%
  • runoff 49%
  • streamflow 35%
  22 Scopus citations

• Quantifying Water and Energy Fluxes Over Different Urban Land Covers in Phoenix, Arizona

  Templeton, N. P., Vivoni, E., Wang, Z. & Schreiner-McGraw, A. P., Feb 27 2018, In: Journal of Geophysical Research: Atmospheres. 123, 4, p. 2111-2128 18 p.

  Research output: Contribution to journal › Article › peer-review

  • Phoenix (AZ) 100%
  • energy flux 71%
  • water flux 68%
  • water use 61%
  • land cover 52%
  21 Scopus citations
• 2017

  Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations

  Soligo, R., Sabatti, F., Chowdhury, S. & Saraniti, M., Nov 2017, In: IEEE Transactions on Electron Devices. 64, 11, p. 4442-4449 8 p., 8061004.

  Research output: Contribution to journal › Article › peer-review

  • Hot electrons 100%
  • Hot Electron 96%
  • Momentum 88%
  • Aerospace engineering 85%
  • Monte Carlo Method 71%
  1 Scopus citations

• Simulation of Phonon Transport in Semiconductors Using a Population-Dependent Many-Body Cellular Monte Carlo Approach

  Sabatti, F. F. M., Goodnick, S. & Saraniti, M., Mar 1 2017, In: Journal of Heat Transfer. 139, 3, 032002.

  Research output: Contribution to journal › Article › peer-review

  • Phonons 100%
  • Phonon 71%
  • Scattering 60%
  • Semiconductor materials 56%
  • Semiconductor 48%
  9 Scopus citations
• 2016

  Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation

  Hathwar, R., Saraniti, M. & Goodnick, S., Jul 28 2016, In: Journal of Applied Physics. 120, 4, 044307.

  Research output: Contribution to journal › Article › peer-review

  • nanowires 100%
  • simulation 47%
  • Runge-Kutta method 38%
  • Brillouin zones 32%
  • electric fields 27%
  5 Scopus citations
• 2015

  Full-band 3-D Monte Carlo simulation of InAs nanowires and high frequency analysis

  Popescu, B., Popescu, D., Saraniti, M. & Lugli, P., Jun 1 2015, In: IEEE Transactions on Electron Devices. 62, 6, p. 1848-1854 7 p., 7102727.

  Research output: Contribution to journal › Article › peer-review

  • Nanowires 100%
  • Monte Carlo Method 85%
  • Nanowire 69%
  • Signal analysis 59%
  • Frequency response 49%
  1 Scopus citations

• The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor

  Soligo, R., Chowdhury, S., Gupta, G., Mishra, U. & Saraniti, M., Jul 1 2015, In: IEEE Electron Device Letters. 36, 7, p. 669-671 3 p., 7112128.

  Research output: Contribution to journal › Article › peer-review

  • Current Gain 100%
  • Hot electrons 83%
  • Hot Electron 80%
  • Cutoff frequency 64%
  • Short Circuit 58%
  2 Scopus citations
• 2014

  Avalanche breakdown in SOI MESFETs

  Lepkowski, W., Wilk, S. J., Parsi, A., Saraniti, M., Ferry, D. & Thornton, T., 2014, In: Solid-State Electronics. 91, p. 78-80 3 p.

  Research output: Contribution to journal › Article › peer-review

  • Avalanche Breakdown 100%
  • MISFET devices 92%
  • MESFET devices 78%
  • Breakdown Voltage 72%
  • MIS (semiconductors) 54%
  7 Scopus citations
• 2012

  Modeling and simulation of terahertz devices

  Goodnick, S. & Saraniti, M., 2012, In: IEEE Microwave Magazine. 13, 7, p. 36-44 9 p., 6355782.

  Research output: Contribution to journal › Article › peer-review

  • Terahertz spectroscopy 100%
  • Submillimeter waves 82%
  • submillimeter waves 47%
  • Biosensors 33%
  • Optical communication 32%
  3 Scopus citations
• 2011

  Carrier dynamics investigation on passivation dielectric constant and RF performance of millimeter-wave power GaN HEMTs

  Guerra, D., Saraniti, M., Ferry, D. K., Goodnick, S. & Marino, F. A., Nov 2011, In: IEEE Transactions on Electron Devices. 58, 11, p. 3876-3884 9 p., 6024451.

  Research output: Contribution to journal › Article › peer-review

  • Power HEMT 100%
  • Wave power 79%
  • Passivation 72%
  • Chemical Passivation 60%
  • Permittivity 59%
  12 Scopus citations

• Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations

  Guerra, D., Marino, F. ALESSIO., Goodnick, S., Ferry, D. & Saraniti, M., Sep 2011, In: International Journal of High Speed Electronics and Systems. 20, 3, p. 423-430 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Power HEMT 100%
  • Figure of Merit 68%
  • Monte Carlo Method 63%
  • Capacitance 51%
  • Simulators 43%
• 2010

  Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs

  Guerra, D., Akis, R., Marino, F. A., Ferry, D. K., Goodnick, S. & Saraniti, M., Nov 2010, In: IEEE Electron Device Letters. 31, 11, p. 1217-1219 3 p., 5585697.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Phonon 97%
  • Electronic Band Structure 87%
  • Aspect ratio 80%
  • Dielectric Constant 79%
  44 Scopus citations

• Brownian Dynamics study of the effects of dielectric constant on conductivity of porins

  Smolyanitsky, A., Aboud, S. & Saraniti, M., Dec 2010, In: Journal of Computational and Theoretical Nanoscience. 7, 12, p. 2543-2546 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Brownian Dynamics 100%
  • Dielectric Constant 93%
  • Conductivity 67%
  • Permittivity 62%
  • Proteins 56%
  1 Scopus citations

• Comparison of N- and Ga-face GaN HEMTs through cellular Monte Carlo simulations

  Guerra, D., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Marino, F. A., Dec 2010, In: IEEE Transactions on Electron Devices. 57, 12, p. 3348-3354 7 p., 5595023.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Monte Carlo Method 91%
  • Electron Gas 67%
  • Simulation 54%
  • Phonon 48%
  18 Scopus citations

• Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors

  Marino, F. A., Faralli, N., Palacios, T., Ferry, D. K., Goodnick, S. & Saraniti, M., Jan 2010, In: IEEE Transactions on Electron Devices. 57, 1, p. 353-360 8 p., 5339189.

  Research output: Contribution to journal › Article › peer-review

  • Threading Dislocation 100%
  • High electron mobility transistors 61%
  • Transistors 45%
  • Compound Mobility 40%
  • Edge Dislocation 22%
  99 Scopus citations

• Emerging N-face GaN HEMT technology: A cellular Monte Carlo study

  Marino, F. A., Saraniti, M., Faralli, N., Ferry, D. K., Goodnick, S. & Guerra, D., Oct 2010, In: IEEE Transactions on Electron Devices. 57, 10, p. 2579-2586 8 p., 5549880.

  Research output: Contribution to journal › Article › peer-review

  • Electron Mobility 100%
  • High electron mobility transistors 96%
  • Length 49%
  • Phonon 47%
  • Electronic Band Structure 42%
  8 Scopus citations

• Field effect modulation of ionic conductance of cylindrical silicon-on-insulator nanopore array

  Joshi, P., Smolyanitsky, A., Petrossian, L., Goryll, M., Saraniti, M. & Thornton, T., 2010, In: Journal of Applied Physics. 107, 5, 054701.

  Research output: Contribution to journal › Article › peer-review

  • insulators 100%
  • modulation 90%
  • silicon 73%
  • electrolytes 56%
  33 Scopus citations

• Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs

  Akis, R., Faralli, N., Goodnick, S., Ferry, D. K. & Saraniti, M., Oct 2010, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2502-2505 4 p.

  Research output: Contribution to journal › Article › peer-review

  • high electron mobility transistors 100%
  • power gain 42%
  • performance 42%
  • cut-off 26%
  • oscillations 20%
  1 Scopus citations

• RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations

  Marino, F. A., Guerra, D., Goodnick, S., Ferry, D. & Saraniti, M., Oct 2010, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 10, p. 2445-2449 5 p.

  Research output: Contribution to journal › Article › peer-review

  • high electron mobility transistors 100%
  • direct current 75%
  • simulators 63%
  • characterization 53%
  • simulation 37%
  1 Scopus citations

• Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography

  Marino, F. A., Cullen, D. A., Smith, D., McCartney, M. & Saraniti, M., 2010, In: Journal of Applied Physics. 107, 5, 054516.

  Research output: Contribution to journal › Article › peer-review

  • high electron mobility transistors 100%
  • holography 94%
  • polarization 51%
  • electrons 40%
  • simulation 37%
  22 Scopus citations
• 2009

  Ballistic transport in InP-based HEMTs

  Akis, R., Faralli, N., Ferry, D. K., Goodnick, S., Phatak, K. A. & Saraniti, M., Dec 2009, In: IEEE Transactions on Electron Devices. 56, 12, p. 2935-2944 10 p., 5299052.

  Research output: Contribution to journal › Article › peer-review

  • High electron mobility transistors 100%
  • Ballistics 95%
  • Monte Carlo Method 91%
  • Electronic Band Structure 87%
  • Semiconductor 65%
  8 Scopus citations

• Figures of merit in high-frequency and high-power GaN HEMTs

  Marino, F. A., Faralli, N., Ferry, D. K., Goodnick, S. & Saraniti, M., 2009, In: Journal of Physics: Conference Series. 193, 012040.

  Research output: Contribution to journal › Article › peer-review

  • high electron mobility transistors 100%
  • figure of merit 92%
  • cut-off 60%
  • electrical faults 47%
  • Fourier analysis 28%
  21 Scopus citations

• Rigid ion model of high field transport inGaN

  Yamakawa, S., Akis, R., Faralli, N., Saraniti, M. & Goodnick, S., 2009, In: Journal of Physics Condensed Matter. 21, 17, 174206.

  Research output: Contribution to journal › Article › peer-review

  • Phonons 100%
  • Deformation Potential 60%
  • Phonon 56%
  • Ions 46%
  • Pseudopotential 42%
  22 Scopus citations

• Silicon nanopores as bioelectronic devices: A simulation study

  Smolyanitsky, A. & Saraniti, M., 2009, In: Journal of Computational Electronics. 8, 2, p. 90-97 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Nanopore 100%
  • Nanopores 83%
  • Silicon 79%
  • Simulation Study 40%
  • Simulation 35%
  7 Scopus citations
• 2002

  Study of a 50-nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer

  Formicone, G. F., Saraniti, M., Vasileska, D. & Ferry, D. K., Jan 2002, In: IEEE Transactions on Electron Devices. 49, 1, p. 125-132 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Inversion layers 100%
  • Monte Carlo Method 60%
  • Surface Roughness 57%
  • Statistical Ensemble 57%
  • Impurities 55%
  24 Scopus citations
• 2001

  Hybrid particle-based full-band analysis of ultra-small MOS

  Wigger, S. J., Goodnick, S. & Saraniti, M., 2001, In: VLSI Design. 13, 1-4, p. 125-129 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Cellular automata 100%
  • Simulators 32%
  • Electric charge 31%
  • Charge transfer 28%
  • 3D modeling 26%
• 2000

  Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors

  Saraniti, M. & Goodnick, S., Oct 2000, In: IEEE Transactions on Electron Devices. 47, 10, p. 1909-1916 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Brillouin Zone 100%
  • Charge transfer 82%
  • Distribution Function 78%
  • Hole Transport 76%
  • Cellular automata 71%
  91 Scopus citations
• 1998

  Cellular automata simulation of nanometre-scale MOSFETs

  Saraniti, M., Zandler, G., Formicone, G., Wigger, S. & Goodnick, S., 1998, In: Semiconductor Science and Technology. 13, 8 SUPPL. A, p. A177-A179

  Research output: Contribution to journal › Article › peer-review

  • cellular automata 100%
  • Cellular automata 94%
  • Conductance 80%
  • field effect transistors 65%
  • Semiconductor doping 63%
  4 Scopus citations

• Cellular automata studies of vertical silicon devices

  Saraniti, M., Zandler, G., Formicone, G. & Goodnick, S., 1998, In: VLSI Design. 8, 1-4, p. 111-115 5 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Cellular automata 100%
  • Silicon 70%
  • Impact ionization 69%
  • Semiconductor doping 67%
  • Drain current 56%

• Cellular automaton study of time-dynamics of avalanche breakdown in IMPATT diodes

  Zandler, G., Oberhuber, R., Liebig, D., Vogl, P., Saraniti, M. & Lugli, P., 1998, In: VLSI Design. 8, 1-4, p. 93-98 6 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • IMPATT diodes 100%
  • Impact ionization 93%
  • Hot carriers 80%
  • Cellular automata 67%
  • Diodes 55%
  1 Scopus citations