Abstract
We present systematic theoretical Cellular Automata (CA) studies of a novel nanometer scale Si device, namely vertically grown Metal Oxide Field Effect Transistors (MOSFET) with channel lengths between 65 and 120 nm. The CA simulations predict drain characteristics and output conductance as a function of gate length. The excellent agreement with available experimental data indicates a high quality oxide/semiconductor interface. Impact ionization is shown to be of minor importance. For inhomogeneous p-doping profiles along the channel, significantly improved drain current saturation is predicted.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 111-115 |
| Number of pages | 5 |
| Journal | VLSI Design |
| Volume | 8 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - 1998 |
Keywords
- Cellular automaton
- Semiconductor device
- Silicon
- Simulation
- Submicron MOSFET
ASJC Scopus subject areas
- Hardware and Architecture
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering