We report on the 2D and 3D modeling of ultra-small MOS structures using a newly developed full-band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Ensemble Monte Carlo (EMC)-Cellular Automata (CA) simulation engine. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory consuming CA method and the slower EMC method. To account for the spatial distribution of the electric field and charge concentration, the hybrid EMC/CA simulator is self-consistently coupled with a 2D and 3D multi-grid Poisson solver. The solver is then used to simulate the performance of a 40 nm gate length n-MOSFET structure.

Original languageEnglish (US)
Pages (from-to)125-129
Number of pages5
JournalVLSI Design
Issue number1-4
StatePublished - 2001


  • Cellular Automata
  • Device modeling
  • Monte Carlo
  • Multi-grid

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering


Dive into the research topics of 'Hybrid particle-based full-band analysis of ultra-small MOS'. Together they form a unique fingerprint.

Cite this