TY - GEN
T1 - Electro-thermal characterization of GaN HEMT on Si through self-consistent energy balance-cellular Monte Carlo device simulations
AU - Latorre-Rey, Alvaro D.
AU - Merrill, Ky
AU - Albrecht, John D.
AU - Saraniti, Marco
N1 - Funding Information:
This work was partially supported by the Air Force Office of Scientific Research (AFOSR) under Grant FA9550-16-1-0406 and by the Air Force Research Laboratory (AFRL) under Grant FA8650-14-1-7418
Publisher Copyright:
© 2017 IEEE.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2017/12/26
Y1 - 2017/12/26
N2 - In order to assess the mechanisms of self-heating observed in GaN HEMTs on Si substrates, we have performed the electro-thermal characterization of an experimental device in terms of the simulation of its DC characteristics through an expanded full band Monte Carlo particle-based simulator self-consistently coupled to an energy balance heat equation for phonons. The accurate temperature profiles obtained for the acoustic and optical phonon modes, showed that the location of the hot spot in the channel is not at the peak of the electric field, but it is shifted towards the drain up to 34nm. Also, the modeled IdVdsVgs space is improved as a result of including the self-heating effects, which modify the charge transport in the active layer of the device through the temperature dependence of the scattering mechanisms considered in the simulations.
AB - In order to assess the mechanisms of self-heating observed in GaN HEMTs on Si substrates, we have performed the electro-thermal characterization of an experimental device in terms of the simulation of its DC characteristics through an expanded full band Monte Carlo particle-based simulator self-consistently coupled to an energy balance heat equation for phonons. The accurate temperature profiles obtained for the acoustic and optical phonon modes, showed that the location of the hot spot in the channel is not at the peak of the electric field, but it is shifted towards the drain up to 34nm. Also, the modeled IdVdsVgs space is improved as a result of including the self-heating effects, which modify the charge transport in the active layer of the device through the temperature dependence of the scattering mechanisms considered in the simulations.
KW - GaN
KW - HEMTs
KW - Monte Carlo
KW - self-heating
UR - http://www.scopus.com/inward/record.url?scp=85046102449&partnerID=8YFLogxK
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U2 - 10.1109/CSICS.2017.8240440
DO - 10.1109/CSICS.2017.8240440
M3 - Conference contribution
AN - SCOPUS:85046102449
T3 - 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
SP - 1
EP - 4
BT - 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
Y2 - 22 October 2017 through 25 October 2017
ER -