We report on an alternative application of X-parameters to improve the efficiency of a general TCAD physical device simulator when simulating the response of a RF power transistor to different load impedance harmonic terminations. In particular, we combine large-signal circuit-device simulations with the predictive capability of X-parameters in order to avoid very time-consuming multi-harmonic simulations. The success of this approach, that is applicable to any physical device simulator, is validated by comparing the current-voltage waveforms of a standard GaN HEMT simulated through multi-harmonic termination device simulations with the ones predicted through X-parameters extracted from single-harmonic termination device simulations. The proposed method greatly improves the speed of the physical simulation of nonlinear device operations with different harmonic loading, the speed of the TCAD X-Parameter extraction, and also reduces convergence issues.

Original languageEnglish (US)
Title of host publication2014 IEEE MTT-S International Microwave Symposium, IMS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479938698
StatePublished - 2014
Event2014 IEEE MTT-S International Microwave Symposium, IMS 2014 - Tampa, FL, United States
Duration: Jun 1 2014Jun 6 2014

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X


Other2014 IEEE MTT-S International Microwave Symposium, IMS 2014
Country/TerritoryUnited States
CityTampa, FL


  • GaN HEMT
  • Harmonic Loading
  • Monte Carlo
  • Nonlinear Modeling
  • TCAD
  • X-parameters

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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