Here we discuss how Monte Carlo Simulations can be exploited to investigate reliability issues in GaN high electron mobility transistor (HEMT) devices. In particular, we report simulation results for high-frequency, high-power state-of-the-art GaN HEMTs focusing our analysis on the effects of that threading edge dislocations on the DC and RF performance of state of the art technologies. A complete characterization of an InGaN back - barrier device has been performed, and the influence of disclocation density on device performance analyzed. Furthermore, a device structure based on the N-face configuration is analyzed.

Original languageEnglish (US)
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Number of pages6
StatePublished - Oct 20 2010
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: May 2 2010May 6 2010

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026


Other2010 IEEE International Reliability Physics Symposium, IRPS 2010
CityGarden Grove, CA


  • Dislocations
  • GaN
  • High-electron mobility transistor (HEMT)
  • High-frequency
  • Monte Carlo
  • Numerical simulation

ASJC Scopus subject areas

  • General Engineering


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