Carrier relaxation and impact ionization in core-shell III-V nanowires

R. Hathwar; Marco Saraniti; Stephen Goodnick

doi:10.1109/NANO.2016.7751540

Carrier relaxation and impact ionization in core-shell III-V nanowires

R. Hathwar, Marco Saraniti, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nanowires are promising candidates for photovoltaic devices due to their large band gaps and reduced electron-phonon interactions. In the present paper, full band Monte Carlo simulations are performed on square In_0.53Ga_0.47As nanowires along [100] cladded with InP to study the energy relaxation of carriers in these wires. The carriers are optically excited above the band gap of the cladded nanowire and the energy relaxation times are analyzed for different cladding and core thicknesses. The percentage of carriers undergoing an impact ionization event is also presented.

Original language	English (US)
Title of host publication	16th International Conference on Nanotechnology - IEEE NANO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	832-835
Number of pages	4
ISBN (Electronic)	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751540
State	Published - Nov 21 2016
Event	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: Aug 22 2016 → Aug 25 2016

Other

Other	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country/Territory	Japan
City	Sendai
Period	8/22/16 → 8/25/16

Keywords

Cladded nanowire
Energy relaxation
Full band Monte Carlo

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/NANO.2016.7751540

Cite this

Hathwar, R, Saraniti, M & Goodnick, S 2016, Carrier relaxation and impact ionization in core-shell III-V nanowires. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751540, Institute of Electrical and Electronics Engineers Inc., pp. 832-835, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 8/22/16. https://doi.org/10.1109/NANO.2016.7751540

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abstract = "Nanowires are promising candidates for photovoltaic devices due to their large band gaps and reduced electron-phonon interactions. In the present paper, full band Monte Carlo simulations are performed on square In0.53Ga0.47As nanowires along [100] cladded with InP to study the energy relaxation of carriers in these wires. The carriers are optically excited above the band gap of the cladded nanowire and the energy relaxation times are analyzed for different cladding and core thicknesses. The percentage of carriers undergoing an impact ionization event is also presented.",

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N2 - Nanowires are promising candidates for photovoltaic devices due to their large band gaps and reduced electron-phonon interactions. In the present paper, full band Monte Carlo simulations are performed on square In0.53Ga0.47As nanowires along [100] cladded with InP to study the energy relaxation of carriers in these wires. The carriers are optically excited above the band gap of the cladded nanowire and the energy relaxation times are analyzed for different cladding and core thicknesses. The percentage of carriers undergoing an impact ionization event is also presented.

AB - Nanowires are promising candidates for photovoltaic devices due to their large band gaps and reduced electron-phonon interactions. In the present paper, full band Monte Carlo simulations are performed on square In0.53Ga0.47As nanowires along [100] cladded with InP to study the energy relaxation of carriers in these wires. The carriers are optically excited above the band gap of the cladded nanowire and the energy relaxation times are analyzed for different cladding and core thicknesses. The percentage of carriers undergoing an impact ionization event is also presented.

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BT - 16th International Conference on Nanotechnology - IEEE NANO 2016

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ER -

Carrier relaxation and impact ionization in core-shell III-V nanowires

Abstract

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Keywords

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