TY - GEN
T1 - Cellular automata for device simulation-concepts and applications
AU - Zandler, G.
AU - Saraniti, Marco
AU - Rein, A.
AU - Vogl, P.
N1 - Publisher Copyright:
© 1996 IEEE.
PY - 1996
Y1 - 1996
N2 - We present a discussion of various concepts of cellular automata for semiconductor transport in the context of device simulation. A newly developed transformation for the kinetic terms of the Boltzmann equation into deterministic transition rules are found to be superior to probabilistic rules, allowing a complete suppression of statistical errors without any loss in numerical performance. To take advantage of the high speed of the resulting Cellular Automaton, a fast and flexible multigrid-solver for the Poisson equation has been developed. This enables us to study also fluctuations of transport quantities, which determine the high frequency noise behavior of MOSFETs, within the Cellular Automata approach. The reliability of the new CA approach for nanostructured devices is demonstrated by a study of gate length influence onto the drain current characteristics of a novel vertically grown MOSFET.
AB - We present a discussion of various concepts of cellular automata for semiconductor transport in the context of device simulation. A newly developed transformation for the kinetic terms of the Boltzmann equation into deterministic transition rules are found to be superior to probabilistic rules, allowing a complete suppression of statistical errors without any loss in numerical performance. To take advantage of the high speed of the resulting Cellular Automaton, a fast and flexible multigrid-solver for the Poisson equation has been developed. This enables us to study also fluctuations of transport quantities, which determine the high frequency noise behavior of MOSFETs, within the Cellular Automata approach. The reliability of the new CA approach for nanostructured devices is demonstrated by a study of gate length influence onto the drain current characteristics of a novel vertically grown MOSFET.
UR - http://www.scopus.com/inward/record.url?scp=84865909733&partnerID=8YFLogxK
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U2 - 10.1109/SISPAD.1996.865263
DO - 10.1109/SISPAD.1996.865263
M3 - Conference contribution
AN - SCOPUS:84865909733
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 39
EP - 42
BT - 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996
Y2 - 2 September 1996 through 4 September 1996
ER -