@inproceedings{c33fa51056fb4905aacb7d16e823d192,
title = "Simulating InP-based composite channel p-HEMTs with ultrashort gates for THz applications",
abstract = "Ultrashort gate length pseudomorphic highelectron-mobility transistors (p-HEMTs) based on an InP substrate and featuring a InAs/In 0.053Ga0.47As composite channel have been modeled using a full-band Cellular Monte Carlo simulator. The affects of pair generation by impact ionization are included and we have incorporated a model to allow carriers to tunnel into and out of the channel. Using a gate length scaling analysis, we can obtain a theoretical upper limit for the cut-off frequency, fT, which we find to be 1.7 THz for this specific type of structure. We also examine factors that may be preventing actual devices from achieving such high frequency operation.",
keywords = "Effective gate length, Monte Carlo methods, Pseudomorphic HEMTs, THz transistors",
author = "R. Akis and R. Soligo and Marino, {F. A.} and Ferry, {D. K.} and Stephen Goodnick and Marco Saraniti",
year = "2012",
doi = "10.1109/NANO.2012.6322205",
language = "English (US)",
isbn = "9781467321983",
series = "Proceedings of the IEEE Conference on Nanotechnology",
booktitle = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012",
note = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012 ; Conference date: 20-08-2012 Through 23-08-2012",
}