Origin of the defect structures in oxygen-implanted silicon-on-insulator material

D. Venables; Stephen Krause; J. D. Lee; J. C. Park; P. Roitman

Origin of the defect structures in oxygen-implanted silicon-on-insulator material

D. Venables, Stephen Krause, J. D. Lee, J. C. Park, P. Roitman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A discussion of the origin and characteristics of SIMOX defect structures is presented in this study. Defect types are categorized as through thickness defects, partial thickness defects and stacking fault pyramids. Defect densities are controlled by processing methods.

Original language	English (US)
Title of host publication	Proceedings - Annual Meeting, Microscopy Society of America
Publisher	Publ by San Francisco Press Inc
Pages	1108-1109
Number of pages	2
State	Published - 1993
Event	Proceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA Duration: Aug 1 1993 → Aug 6 1993

Other

Other	Proceedings of the 51st Annual Meeting Microscopy Society of America
City	Cincinnati, OH, USA
Period	8/1/93 → 8/6/93

ASJC Scopus subject areas

Engineering(all)

Cite this

@inproceedings{281f50d895c44286a2fdfc24d308808b,

title = "Origin of the defect structures in oxygen-implanted silicon-on-insulator material",

abstract = "A discussion of the origin and characteristics of SIMOX defect structures is presented in this study. Defect types are categorized as through thickness defects, partial thickness defects and stacking fault pyramids. Defect densities are controlled by processing methods.",

author = "D. Venables and Stephen Krause and Lee, {J. D.} and Park, {J. C.} and P. Roitman",

year = "1993",

language = "English (US)",

pages = "1108--1109",

booktitle = "Proceedings - Annual Meeting, Microscopy Society of America",

publisher = "Publ by San Francisco Press Inc",

note = "Proceedings of the 51st Annual Meeting Microscopy Society of America ; Conference date: 01-08-1993 Through 06-08-1993",

}

TY - GEN

T1 - Origin of the defect structures in oxygen-implanted silicon-on-insulator material

AU - Venables, D.

AU - Krause, Stephen

AU - Lee, J. D.

AU - Park, J. C.

AU - Roitman, P.

PY - 1993

Y1 - 1993

N2 - A discussion of the origin and characteristics of SIMOX defect structures is presented in this study. Defect types are categorized as through thickness defects, partial thickness defects and stacking fault pyramids. Defect densities are controlled by processing methods.

AB - A discussion of the origin and characteristics of SIMOX defect structures is presented in this study. Defect types are categorized as through thickness defects, partial thickness defects and stacking fault pyramids. Defect densities are controlled by processing methods.

UR - http://www.scopus.com/inward/record.url?scp=0027707884&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027707884&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027707884

SP - 1108

EP - 1109

BT - Proceedings - Annual Meeting, Microscopy Society of America

PB - Publ by San Francisco Press Inc

T2 - Proceedings of the 51st Annual Meeting Microscopy Society of America

Y2 - 1 August 1993 through 6 August 1993

ER -

Origin of the defect structures in oxygen-implanted silicon-on-insulator material

Abstract

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ASJC Scopus subject areas

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