@inproceedings{1dc042913985418198aa7afc7685eafc,
title = "Si/Sige modulation doped structures by gas source molecular beam epitaxy using arsenic as a donor",
abstract = "We have grown Si/SiGe modulation doped quantum wells by gas source molecular beam epitaxy using, for the first time, arsenic as an n-type dopant. The layers are characterised by magnetotransport measurements and SIMS analysis. The latter shows an arsenic concentration in excess of 1019 cm¿3 along with strong surface segregation.",
author = "A. Matsumura and Prasad, {R. S.} and Thornton, {T. J.} and Fernandez, {J. M.} and Xie, {M. H.} and X. Zhang and J. Zhang and Joyce, {B. A.}",
year = "1994",
month = jan,
day = "1",
language = "English (US)",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "741--744",
editor = "Peter Ashburn and Chris Hill",
booktitle = "European Solid-State Device Research Conference",
note = "24th European Solid State Device Research Conference, ESSDERC 1994 ; Conference date: 11-09-1994 Through 15-09-1994",
}