Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects

J. L. Taggart, R. Fang, Yago Gonzalez Velo, Hugh Barnaby, Michael Kozicki, J. L. Pacheco, E. S. Bielejec, M. L. McLain, N. Chamele, A. Mahmud, M. Mitkova

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of $3.19 × 1013 n/cm2. In the second test, CBRAM cells were bombarded with 200 keV Si2+ ions. In both the experiments, the high resistance and low resistance states (LRSs) of the cells were observed to converge with increasing particle fluence. After reaching a 14 MeV neutron fluence of $2.93 × 1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state. In situ testing during heavy ion exposure showed a steady decrease in the resistance state of each cell with each successive exposure to the beam. The devices eventually became locked in an LRS.

Original languageEnglish (US)
Article number7847370
Pages (from-to)2300-2306
Number of pages7
JournalIEEE Transactions on Nuclear Science
Issue number8
StatePublished - Aug 2017


  • Cation
  • chalcogenide glass
  • conductive bridging
  • conductive bridging random access memory (CBRAM)
  • displacement damage
  • electrochemical metallization
  • heavy ion
  • ion beam
  • memristors
  • nanoionic memory
  • neutrons
  • programmable metallization cell
  • radiation effects
  • resistive random access memory
  • resistive switching

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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