Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects

J. L. Taggart; R. Fang; Yago Gonzalez Velo; Hugh Barnaby; Michael Kozicki; J. L. Pacheco; E. S. Bielejec; M. L. McLain; N. Chamele; A. Mahmud; M. Mitkova

doi:10.1109/TNS.2017.2666147

Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects

J. L. Taggart, R. Fang, Yago Gonzalez Velo, Hugh Barnaby, Michael Kozicki, J. L. Pacheco, E. S. Bielejec, M. L. McLain, N. Chamele, A. Mahmud, M. Mitkova

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of $3.19 × 1013 n/cm². In the second test, CBRAM cells were bombarded with 200 keV Si²⁺ ions. In both the experiments, the high resistance and low resistance states (LRSs) of the cells were observed to converge with increasing particle fluence. After reaching a 14 MeV neutron fluence of $2.93 × 1013 n/cm², the CBRAM cells became irrecoverably locked into their final resistance state. In situ testing during heavy ion exposure showed a steady decrease in the resistance state of each cell with each successive exposure to the beam. The devices eventually became locked in an LRS.

Original language	English (US)
Article number	7847370
Pages (from-to)	2300-2306
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	64
Issue number	8
DOIs	https://doi.org/10.1109/TNS.2017.2666147
State	Published - Aug 2017

Keywords

Cation
chalcogenide glass
conductive bridging
conductive bridging random access memory (CBRAM)
displacement damage
electrochemical metallization
heavy ion
ion beam
memristors
nanoionic memory
neutrons
programmable metallization cell
radiation effects
resistive random access memory
resistive switching

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2017.2666147

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title = "Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects",

abstract = "Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of $3.19 × 1013 n/cm2. In the second test, CBRAM cells were bombarded with 200 keV Si2+ ions. In both the experiments, the high resistance and low resistance states (LRSs) of the cells were observed to converge with increasing particle fluence. After reaching a 14 MeV neutron fluence of $2.93 × 1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state. In situ testing during heavy ion exposure showed a steady decrease in the resistance state of each cell with each successive exposure to the beam. The devices eventually became locked in an LRS.",

keywords = "Cation, chalcogenide glass, conductive bridging, conductive bridging random access memory (CBRAM), displacement damage, electrochemical metallization, heavy ion, ion beam, memristors, nanoionic memory, neutrons, programmable metallization cell, radiation effects, resistive random access memory, resistive switching",

author = "Taggart, {J. L.} and R. Fang and {Gonzalez Velo}, Yago and Hugh Barnaby and Michael Kozicki and Pacheco, {J. L.} and Bielejec, {E. S.} and McLain, {M. L.} and N. Chamele and A. Mahmud and M. Mitkova",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2017",

month = aug,

doi = "10.1109/TNS.2017.2666147",

language = "English (US)",

volume = "64",

pages = "2300--2306",

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T1 - Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects

AU - Taggart, J. L.

AU - Fang, R.

AU - Gonzalez Velo, Yago

AU - Barnaby, Hugh

AU - Kozicki, Michael

AU - Pacheco, J. L.

AU - Bielejec, E. S.

AU - McLain, M. L.

AU - Chamele, N.

AU - Mahmud, A.

AU - Mitkova, M.

PY - 2017/8

Y1 - 2017/8

N2 - Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of $3.19 × 1013 n/cm2. In the second test, CBRAM cells were bombarded with 200 keV Si2+ ions. In both the experiments, the high resistance and low resistance states (LRSs) of the cells were observed to converge with increasing particle fluence. After reaching a 14 MeV neutron fluence of $2.93 × 1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state. In situ testing during heavy ion exposure showed a steady decrease in the resistance state of each cell with each successive exposure to the beam. The devices eventually became locked in an LRS.

AB - Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of $3.19 × 1013 n/cm2. In the second test, CBRAM cells were bombarded with 200 keV Si2+ ions. In both the experiments, the high resistance and low resistance states (LRSs) of the cells were observed to converge with increasing particle fluence. After reaching a 14 MeV neutron fluence of $2.93 × 1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state. In situ testing during heavy ion exposure showed a steady decrease in the resistance state of each cell with each successive exposure to the beam. The devices eventually became locked in an LRS.

KW - Cation

KW - chalcogenide glass

KW - conductive bridging

KW - conductive bridging random access memory (CBRAM)

KW - displacement damage

KW - electrochemical metallization

KW - heavy ion

KW - ion beam

KW - memristors

KW - nanoionic memory

KW - neutrons

KW - programmable metallization cell

KW - radiation effects

KW - resistive random access memory

KW - resistive switching

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Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects

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