Modeling low dose rate effects in shallow trench isolation oxides

Physics & Astronomy

• isolation 100%
• dosage 69%
• oxides 65%
• augmentation 25%
• radiation 23%
• absorption cross sections 21%
• CMOS 18%
• field effect transistors 16%
• traps 15%
• damage 15%
• sensitivity 12%
• defects 11%

Engineering & Materials Science

• Oxides 90%
• Dosimetry 51%
• Hole traps 41%
• Radiation 33%
• Field effect transistors 22%
• Degradation 14%
• Defects 14%
• Experiments 7%