Modeling low dose rate effects in shallow trench isolation oxides

Ivan S. Esqueda, Hugh Barnaby, Philippe C. Adell, Bernard G. Rax, Harold P. Hjalmarson, Michael L. McLain, Ronald L. Pease

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. One dimensional (1-D) numerical calculations are used to investigate the key mechanisms responsible for the dose rate dependent buildup of radiation-induced defects in shallow trench isolation (STI) oxides. Calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. The dose rate sensitivity of STI oxides is compared with the sensitivity of bipolar base oxides using model calculations.

Original languageEnglish (US)
Article number6044744
Pages (from-to)2945-2952
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number6 PART 1
StatePublished - Dec 2011


  • Bipolar
  • CMOS
  • dose rate
  • enhanced low dose rate sensitivity (ELDRS)
  • interface traps
  • shallow trench isolation (STI)
  • silicon dioxide
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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