Microwave assisted low temperature encapsulation of Ag films by Cu reactions using Ag-Cu alloy structures

Sayantan Das; Terry Alford

doi:10.1016/j.matlet.2012.08.075

Microwave assisted low temperature encapsulation of Ag films by Cu reactions using Ag-Cu alloy structures

Sayantan Das, Terry Alford

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Copper (I) oxide (Cu ₂O) forms an encapsulation layer after annealing Ag-17 at Cu alloy thin films inside a microwave cavity. The maximum temperature reached during this process is 70 °C which makes microwaves an efficient low temperature processing tool for flexible electronics. Rutherford backscattering spectrometry is used to study the encapsulation of Ag films by copper oxide. X-ray diffraction shows preferential orientation along the [111] direction for both Ag and Cu ₂O. Four point probe measurements suggest that the resistivity is controlled by the residual Cu present in the alloy films.

Original language	English (US)
Pages (from-to)	163-165
Number of pages	3
Journal	Materials Letters
Volume	89
DOIs	https://doi.org/10.1016/j.matlet.2012.08.075
State	Published - Dec 15 2012

Keywords

Electrical properties
Oxidation
Segregation
Thin films

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2012.08.075

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title = "Microwave assisted low temperature encapsulation of Ag films by Cu reactions using Ag-Cu alloy structures",

abstract = "Copper (I) oxide (Cu 2O) forms an encapsulation layer after annealing Ag-17 at Cu alloy thin films inside a microwave cavity. The maximum temperature reached during this process is 70 °C which makes microwaves an efficient low temperature processing tool for flexible electronics. Rutherford backscattering spectrometry is used to study the encapsulation of Ag films by copper oxide. X-ray diffraction shows preferential orientation along the [111] direction for both Ag and Cu 2O. Four point probe measurements suggest that the resistivity is controlled by the residual Cu present in the alloy films.",

keywords = "Electrical properties, Oxidation, Segregation, Thin films",

author = "Sayantan Das and Terry Alford",

note = "Funding Information: This work was partially supported by National Science Foundation (C. Ying, DMR-0902277 ) and the authors are greatly indebted.",

year = "2012",

month = dec,

day = "15",

doi = "10.1016/j.matlet.2012.08.075",

language = "English (US)",

volume = "89",

pages = "163--165",

journal = "Materials Letters",

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TY - JOUR

T1 - Microwave assisted low temperature encapsulation of Ag films by Cu reactions using Ag-Cu alloy structures

AU - Das, Sayantan

AU - Alford, Terry

N1 - Funding Information: This work was partially supported by National Science Foundation (C. Ying, DMR-0902277 ) and the authors are greatly indebted.

PY - 2012/12/15

Y1 - 2012/12/15

N2 - Copper (I) oxide (Cu 2O) forms an encapsulation layer after annealing Ag-17 at Cu alloy thin films inside a microwave cavity. The maximum temperature reached during this process is 70 °C which makes microwaves an efficient low temperature processing tool for flexible electronics. Rutherford backscattering spectrometry is used to study the encapsulation of Ag films by copper oxide. X-ray diffraction shows preferential orientation along the [111] direction for both Ag and Cu 2O. Four point probe measurements suggest that the resistivity is controlled by the residual Cu present in the alloy films.

AB - Copper (I) oxide (Cu 2O) forms an encapsulation layer after annealing Ag-17 at Cu alloy thin films inside a microwave cavity. The maximum temperature reached during this process is 70 °C which makes microwaves an efficient low temperature processing tool for flexible electronics. Rutherford backscattering spectrometry is used to study the encapsulation of Ag films by copper oxide. X-ray diffraction shows preferential orientation along the [111] direction for both Ag and Cu 2O. Four point probe measurements suggest that the resistivity is controlled by the residual Cu present in the alloy films.

KW - Electrical properties

KW - Oxidation

KW - Segregation

KW - Thin films

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DO - 10.1016/j.matlet.2012.08.075

M3 - Article

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SN - 0167-577X

VL - 89

SP - 163

EP - 165

JO - Materials Letters

JF - Materials Letters

ER -

Microwave assisted low temperature encapsulation of Ag films by Cu reactions using Ag-Cu alloy structures

Abstract

Keywords

ASJC Scopus subject areas

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