Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

Keyphrases

• Highly Selective 100%
• Device Fabrication 100%
• Nitride Materials 100%
• Photoelectrochemical Etching 100%
• Defect Investigation 100%
• Dislocation 33%
• Device Characterization 33%
• Nanometer Scale 33%
• Density Estimation 33%
• Dislocation Density 33%
• Etching Process 33%
• Etched Surface 33%
• GaN Material 33%
• Vertical Wire 33%
• Illumination Intensity 33%

Material Science

• Device Fabrication 100%
• Nitride Compound 100%
• Density 33%
• Molecular Beam Epitaxy 33%
• Surface (Surface Science) 33%