Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

P. Visconti; M. A. Reshchikov; K. M. Jones; D. F. Wang; R. Cingolani; H. Morkoç̌; R. J. Molnar; David Smith

doi:10.1116/1.1378009

Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

P. Visconti, M. A. Reshchikov, K. M. Jones, D. F. Wang, R. Cingolani, H. Morkoç̌, R. J. Molnar, David Smith

Research output: Contribution to journal › Conference article › peer-review

32 Scopus citations

Abstract

Photoelectrochemical etching experiments were performed on n-type MBE and HVPE-grown GaN samples in order to ascertain the feasibility of this method for device fabrication and dislocation-density estimation. A moderate-illumination intensity was used to selectively etch GaN material between dislocation sites, leaving on the etched surface free-standing nanometer-scale vertical wires. The obtained results confirm the effectiveness of the PEC etching process for device fabrication and characterization of nitride materials.

Original language	English (US)
Pages (from-to)	1328-1333
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1378009
State	Published - Jul 2001
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: Oct 15 2000 → Oct 18 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1378009

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Visconti, P., Reshchikov, M. A., Jones, K. M., Wang, D. F., Cingolani, R., Morkoç̌, H., Molnar, R. J., & Smith, D. (2001). Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(4), 1328-1333. https://doi.org/10.1116/1.1378009

Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication. / Visconti, P.; Reshchikov, M. A.; Jones, K. M. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 4, 07.2001, p. 1328-1333.

Research output: Contribution to journal › Conference article › peer-review

Visconti, P, Reshchikov, MA, Jones, KM, Wang, DF, Cingolani, R, Morkoç̌, H, Molnar, RJ & Smith, D 2001, 'Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 19, no. 4, pp. 1328-1333. https://doi.org/10.1116/1.1378009

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abstract = "Photoelectrochemical etching experiments were performed on n-type MBE and HVPE-grown GaN samples in order to ascertain the feasibility of this method for device fabrication and dislocation-density estimation. A moderate-illumination intensity was used to selectively etch GaN material between dislocation sites, leaving on the etched surface free-standing nanometer-scale vertical wires. The obtained results confirm the effectiveness of the PEC etching process for device fabrication and characterization of nitride materials.",

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AB - Photoelectrochemical etching experiments were performed on n-type MBE and HVPE-grown GaN samples in order to ascertain the feasibility of this method for device fabrication and dislocation-density estimation. A moderate-illumination intensity was used to selectively etch GaN material between dislocation sites, leaving on the etched surface free-standing nanometer-scale vertical wires. The obtained results confirm the effectiveness of the PEC etching process for device fabrication and characterization of nitride materials.

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Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

Abstract

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