Enhanced adhesion of copper films to SiO 2, PSG and BPSG by refractory metal additions

S. A. Rafalski, R. L. Spreitzer, S. W. Russell, Terry Alford, J. Li, M. Moinpour, F. Moghadam, J. W. Mayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


Copper films generally exhibit poor adhesion on dielectrics. It has been shown that the addition of refractory metals promotes adhesion via an interfacial reaction or better wetting to the dielectric. We investigate the adhesion of Cu-refractory metal (Cr, Ti) alloy films and bilayers on various silicon oxide substrates (SiO 2, PSG, BPSG) after annealing in the temperature range 400-600°C by conventional furnace using N 2/H 2 forming gas. Rutherford backscattering spectrometry (RBS) was used to determine the interfacial reaction characteristics. The efficacy of a variation of the standard Scoth TM tape testing was evaluated. We found that the combined Scotch TM tape/scribe adhesion test revealed excellent qualitative bonding information and could be correlated well to RBS characterization. We were able to optimize the sample configurations and chemical compositions to achieve the best adhering film.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
StatePublished - 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994


OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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