Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping

Tine U. Nærland, Simone Bernardini, Nathan Stoddard, Ethan Good, André Augusto, Mariana Bertoni

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

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Engineering & Materials Science