Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping

Tine U. Nærland; Simone Bernardini; Nathan Stoddard; Ethan Good; André Augusto; Mariana Bertoni

doi:10.1016/j.egypro.2017.09.321

Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping

Tine U. Nærland, Simone Bernardini, Nathan Stoddard, Ethan Good, André Augusto, Mariana Bertoni

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

In this work, we are showing that iron (Fe) related defects in mono-silicon have very different recombination characteristics depending on the doping element employed. While the defect characteristics of the Fe in its dissociated state is comparably the same in the materials of investigation, the defect characteristics of the associated state vary considerably. By using, defect parameter contour mapping (DPCM), a newly developed method for analyzing temperature and injection dependent lifetime data, we have for the first time, been able to show that in the case of gallium doping it is the orthorhombic state of the Fe-acceptor complex that is dominating the lifetime.

Original language	English (US)
Pages (from-to)	138-145
Number of pages	8
Journal	Energy Procedia
Volume	124
DOIs	https://doi.org/10.1016/j.egypro.2017.09.321
State	Published - 2017
Event	7th International Conference on Silicon Photovoltaics, SiliconPV 2017 - Freiburg, Germany Duration: Apr 3 2017 → Apr 5 2017

Keywords

Boron-doping
DPCM
Fe-contamination
Gallium-doping
Indium-doping
Lifetime Spectroscopy

ASJC Scopus subject areas

Energy(all)

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10.1016/j.egypro.2017.09.321

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@article{0b1e98f1b7f64e53a0b9ef88b166f4ea,

title = "Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping",

abstract = "In this work, we are showing that iron (Fe) related defects in mono-silicon have very different recombination characteristics depending on the doping element employed. While the defect characteristics of the Fe in its dissociated state is comparably the same in the materials of investigation, the defect characteristics of the associated state vary considerably. By using, defect parameter contour mapping (DPCM), a newly developed method for analyzing temperature and injection dependent lifetime data, we have for the first time, been able to show that in the case of gallium doping it is the orthorhombic state of the Fe-acceptor complex that is dominating the lifetime.",

keywords = "Boron-doping, DPCM, Fe-contamination, Gallium-doping, Indium-doping, Lifetime Spectroscopy",

author = "N{\ae}rland, {Tine U.} and Simone Bernardini and Nathan Stoddard and Ethan Good and Andr{\'e} Augusto and Mariana Bertoni",

note = "Funding Information: This project is funded by US Department of Energy{\textquoteright}s SolarMat II under contract DE-EE0006806. The authors would like to thank Jason Yu and Jianwei Shi for help with surface cleaning and passivation. Publisher Copyright: {\textcopyright} 2017 The Authors. Published by Elsevier Ltd.; 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 ; Conference date: 03-04-2017 Through 05-04-2017",

year = "2017",

doi = "10.1016/j.egypro.2017.09.321",

language = "English (US)",

volume = "124",

pages = "138--145",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping

AU - Nærland, Tine U.

AU - Bernardini, Simone

AU - Stoddard, Nathan

AU - Good, Ethan

AU - Augusto, André

AU - Bertoni, Mariana

N1 - Funding Information: This project is funded by US Department of Energy’s SolarMat II under contract DE-EE0006806. The authors would like to thank Jason Yu and Jianwei Shi for help with surface cleaning and passivation. Publisher Copyright: © 2017 The Authors. Published by Elsevier Ltd.

PY - 2017

Y1 - 2017

N2 - In this work, we are showing that iron (Fe) related defects in mono-silicon have very different recombination characteristics depending on the doping element employed. While the defect characteristics of the Fe in its dissociated state is comparably the same in the materials of investigation, the defect characteristics of the associated state vary considerably. By using, defect parameter contour mapping (DPCM), a newly developed method for analyzing temperature and injection dependent lifetime data, we have for the first time, been able to show that in the case of gallium doping it is the orthorhombic state of the Fe-acceptor complex that is dominating the lifetime.

AB - In this work, we are showing that iron (Fe) related defects in mono-silicon have very different recombination characteristics depending on the doping element employed. While the defect characteristics of the Fe in its dissociated state is comparably the same in the materials of investigation, the defect characteristics of the associated state vary considerably. By using, defect parameter contour mapping (DPCM), a newly developed method for analyzing temperature and injection dependent lifetime data, we have for the first time, been able to show that in the case of gallium doping it is the orthorhombic state of the Fe-acceptor complex that is dominating the lifetime.

KW - Boron-doping

KW - DPCM

KW - Fe-contamination

KW - Gallium-doping

KW - Indium-doping

KW - Lifetime Spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85031924166&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85031924166&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2017.09.321

DO - 10.1016/j.egypro.2017.09.321

M3 - Conference article

AN - SCOPUS:85031924166

SN - 1876-6102

VL - 124

SP - 138

EP - 145

JO - Energy Procedia

JF - Energy Procedia

T2 - 7th International Conference on Silicon Photovoltaics, SiliconPV 2017

Y2 - 3 April 2017 through 5 April 2017

ER -

Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping

Abstract

Keywords

ASJC Scopus subject areas

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