Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition

Engineering & Materials Science

• Valence bands 100%
• Atomic layer deposition 85%
• Zinc oxide 73%
• Plasmas 51%
• Lanthanum oxides 50%
• Hafnium oxides 48%
• Ultraviolet spectroscopy 48%
• Photoelectron spectroscopy 47%
• High resolution electron microscopy 47%
• Oxygen 44%
• Electronic properties 42%
• Thin film transistors 35%
• Helium 31%
• Electrons 27%
• X rays 25%
• Substrates 19%

Chemical Compounds

• Band Offset 88%
• Atomic Layer Epitaxy 64%
• Valence Band 61%
• Zinc Oxide 54%
• Ultra-Violet Photoelectron Spectroscopy 35%
• Plasma 34%
• Hafnium Atom 33%
• Amorphous Structure 33%
• Dioxygen 27%
• Electronic Property 22%
• Electron Particle 15%
• Oxide 15%
• Liquid Film 13%
• Amount 11%
• Surface 8%

Physics & Astronomy

• atomic layer epitaxy 57%
• zinc oxides 53%
• alignment 43%
• lanthanum oxides 10%
• valence 10%
• hafnium oxides 9%
• helium plasma 9%
• oxygen 8%
• photoelectric emission 6%
• electron microscopy 5%
• transistors 5%
• high resolution 4%
• spectroscopy 3%
• electronics 3%
• thin films 3%
• x rays 3%
• electrons 2%