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An analysis of high temperature (≥1150 °C) furnace annealing of buried oxide wafers formed by ion implantation
S. R. Wilson, M. E. Burnham, M. Kottke, R. P. Lorigan, Stephen Krause, C. O. Jung, J. A. Leavitt, L. C. McIntyre, J. Seerveld, P. Stoss
Research output: Contribution to journal › Article › peer-review
1
Scopus
citations