The chemical and electronic passivation of semiconductors is an important issue for the fabrication of electronic devices. In this work we use angle resolved x-ray photoelectron spectroscopy to study the chemical passivation of silicon (001) surface with selenium at a surface coverage close to 1 monolayer. The interaction of Se with silicon breaks the Si-Si dimers leading to a change in the surface reconstruction from a (2×1) to (1×1) symmetry. The silicon surface covered with a selenium monolayer was exposed to dry oxygen at 300 °C for 80 min. We find that the presence of the Se monolayer does not appreciably reduce the formation of a Si O2 layer.
ASJC Scopus subject areas
- General Physics and Astronomy