TY - JOUR
T1 - X-ray characterization at growth temperatures of InxGa 1-xN growth by MOVPE
AU - Ju, Guangxu
AU - Ninoi, Koji
AU - Kamiya, Hajime
AU - Fuchi, Shingo
AU - Tabuchi, Masao
AU - Takeda, Yoshikazu
N1 - Funding Information:
This work was supported in part by the Grant-in Aid for Scientific Research (S) #18106001 from the Japan Society for the Promotion of Science . This work was performed as a part of the Projects 2005G155 , 2006G247 , and 2007G557 accepted by the Photon Factory Program Advisory Committee.
PY - 2011/3/1
Y1 - 2011/3/1
N2 - The growth of InxGa1-xN layers on c-plane GaN (2 μm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N2 as the carrier gas. X-ray CTR scatterings on InxGa1-xN layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or InxGa1-xN in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of InxGa 1-xN. Single diffraction peaks of In0.16Ga0.84N and In0.38Ga0.62N films were observed at 830 and 780 °C, respectively.
AB - The growth of InxGa1-xN layers on c-plane GaN (2 μm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N2 as the carrier gas. X-ray CTR scatterings on InxGa1-xN layer were measured at growth temperatures and after cooling down to room temperature. The differences in X-ray CTR scattering spectra at growth temperatures and at room temperature were discussed. The peak InN (0 0 0 2) or InGaN was observed at growth temperature. On the other hand, In (1 0 1) and In (0 0 2) peaks were observed with InN (0 0 2) or InxGa1-xN in the X-ray CTR spectra after cooling down to room temperature. These differences should be important to reveal the real growth processes of InxGa 1-xN. Single diffraction peaks of In0.16Ga0.84N and In0.38Ga0.62N films were observed at 830 and 780 °C, respectively.
KW - A1. X-ray crystal truncation rod
KW - A2. Growth temperature
KW - A3. Metalorganic vapor phase epitaxy
KW - B1. InGaN
KW - B2. Semiconducting IIIV materials
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U2 - 10.1016/j.jcrysgro.2010.11.051
DO - 10.1016/j.jcrysgro.2010.11.051
M3 - Article
AN - SCOPUS:79952735141
SN - 0022-0248
VL - 318
SP - 1143
EP - 1146
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -