What controls deposition rate in electron-beam chemical vapor deposition?

William B. White, Konrad Rykaczewski, Andrei G. Fedorov

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


The key physical processes governing electron-beam-assisted chemical vapor deposition are analyzed via a combination of theoretical modeling and supporting experiments. The scaling laws that define growth of the nanoscale deposits are developed and verified using carefully designed experiments of carbon deposition from methane onto a silicon substrate. The results suggest that the chamber-scale continuous transport of the precursor gas is the rate controlling process in electron-beam chemical vapor deposition.

Original languageEnglish (US)
Article number086101
JournalPhysical Review Letters
Issue number8
StatePublished - Aug 29 2006
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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