Warm electrons in degenerate quasi-two-dimensional semiconductors

D. K. Ferry

doi:10.1016/0039-6028(78)90481-8

Warm electrons in degenerate quasi-two-dimensional semiconductors

D. K. Ferry

Arizona State University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The energy-diffusion equation for carrier flow in energy space is extended to the case of degenerate semiconductors and applied to warm electrons at low temperatures in quasi-two-dimensional semiconductors. A continuity equation for energy flow is also utilized to include the effects of large energy exchange collisions. The electron temperature is found to vary as T₀(1 +βF²), where the value of β falls generally in the range 10^-6-10^-4 cm² V² for a silicon inversion layer and the value of β depends upon the relevant scattering mechanisms and surface mobility. The role of the large energy exchange collisions is primarily to skew the warm-electron distribution to the high energy tail.

Original language	English (US)
Pages (from-to)	136-146
Number of pages	11
Journal	Surface Science
Volume	73
Issue number	C
DOIs	https://doi.org/10.1016/0039-6028(78)90481-8
State	Published - May 1 1978

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(78)90481-8

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abstract = "The energy-diffusion equation for carrier flow in energy space is extended to the case of degenerate semiconductors and applied to warm electrons at low temperatures in quasi-two-dimensional semiconductors. A continuity equation for energy flow is also utilized to include the effects of large energy exchange collisions. The electron temperature is found to vary as T0(1 +βF2), where the value of β falls generally in the range 10-6-10-4 cm2 V2 for a silicon inversion layer and the value of β depends upon the relevant scattering mechanisms and surface mobility. The role of the large energy exchange collisions is primarily to skew the warm-electron distribution to the high energy tail.",

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N2 - The energy-diffusion equation for carrier flow in energy space is extended to the case of degenerate semiconductors and applied to warm electrons at low temperatures in quasi-two-dimensional semiconductors. A continuity equation for energy flow is also utilized to include the effects of large energy exchange collisions. The electron temperature is found to vary as T0(1 +βF2), where the value of β falls generally in the range 10-6-10-4 cm2 V2 for a silicon inversion layer and the value of β depends upon the relevant scattering mechanisms and surface mobility. The role of the large energy exchange collisions is primarily to skew the warm-electron distribution to the high energy tail.

AB - The energy-diffusion equation for carrier flow in energy space is extended to the case of degenerate semiconductors and applied to warm electrons at low temperatures in quasi-two-dimensional semiconductors. A continuity equation for energy flow is also utilized to include the effects of large energy exchange collisions. The electron temperature is found to vary as T0(1 +βF2), where the value of β falls generally in the range 10-6-10-4 cm2 V2 for a silicon inversion layer and the value of β depends upon the relevant scattering mechanisms and surface mobility. The role of the large energy exchange collisions is primarily to skew the warm-electron distribution to the high energy tail.

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Warm electrons in degenerate quasi-two-dimensional semiconductors

Abstract

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