Vth-control method in double gate field effect transistor domino circuits

Saeed Zeinolabedinzadeh; Behzad Ebrahimi; Ali Afzali-Kusha

doi:10.1109/ULIS.2009.4897594

V_th-control method in double gate field effect transistor domino circuits

Saeed Zeinolabedinzadeh, Behzad Ebrahimi, Ali Afzali-Kusha

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper we investigate the possibility of power reduction in DGFET devices by means of Vth control technique applied for domino logics. Previously the effectiveness of V_th control method by means of back gate biasing has been investigated. In this paper we show that by special using back gate to control the threshold voltage we can save not only significant standby power but even considerable dynamic power for domino circuits while preserving their speed. Comparing Vth control method with the conventional double gate scheme and a recently published successful work, showed the performance of this method. It is shown that the performance of this method will be better in higher temperatures. Simulations were done by HSPICE circuit simulator using DGFET PTM model.

Original language	English (US)
Title of host publication	Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Pages	297-300
Number of pages	4
DOIs	https://doi.org/10.1109/ULIS.2009.4897594
State	Published - 2009
Externally published	Yes
Event	10th International Conference on ULtimate Integration of Silicon, ULIS 2009 - Aachen, Germany Duration: Mar 18 2009 → Mar 20 2009

Publication series

Name	Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Conference

Conference	10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Country/Territory	Germany
City	Aachen
Period	3/18/09 → 3/20/09

Keywords

Domino logic
Double-gate field effect transistors
V-control method

ASJC Scopus subject areas

Computational Theory and Mathematics
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ULIS.2009.4897594

Cite this

Zeinolabedinzadeh, S., Ebrahimi, B., & Afzali-Kusha, A. (2009). V_th-control method in double gate field effect transistor domino circuits. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (pp. 297-300). Article 4897594 (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009). https://doi.org/10.1109/ULIS.2009.4897594

V_th-control method in double gate field effect transistor domino circuits. / Zeinolabedinzadeh, Saeed; Ebrahimi, Behzad; Afzali-Kusha, Ali.
Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. 2009. p. 297-300 4897594 (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zeinolabedinzadeh, S, Ebrahimi, B & Afzali-Kusha, A 2009, V_th-control method in double gate field effect transistor domino circuits. in Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009., 4897594, Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009, pp. 297-300, 10th International Conference on ULtimate Integration of Silicon, ULIS 2009, Aachen, Germany, 3/18/09. https://doi.org/10.1109/ULIS.2009.4897594

Zeinolabedinzadeh S, Ebrahimi B, Afzali-Kusha A. V_th-control method in double gate field effect transistor domino circuits. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. 2009. p. 297-300. 4897594. (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009). doi: 10.1109/ULIS.2009.4897594

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