In this letter, we propose a CMOS-compatible selector prototype based on a Cu-SiO2 programmable metallization cell. With a porous e-beam evaporated SiO2 switching layer, the filament ruptures in less than a millisecond. The device exhibits diode-like I-V characteristics with a selectivity of more than 107. This volatile PMC can be changed to a bipolar resistive memory switch if the SiO2 switching layer is thermally doped with Cu. Threshold switching is a result of filament dissolution caused by Cu diffusion in SiO2.

Original languageEnglish (US)
Article number7429703
Pages (from-to)580-583
Number of pages4
JournalIEEE Electron Device Letters
Issue number5
StatePublished - May 2016


  • Cu diffusion
  • PMC
  • SiO
  • crosspoint array
  • memory switching
  • selector device
  • threshold switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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