Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder

Engineering & Materials Science

• Carrier concentration 100%
• Monolayers 92%
• Electrons 70%
• Relaxation 65%
• Semiconductor materials 62%
• Substrates 49%
• Transition metals 20%
• Boron nitride 19%
• Relaxation time 18%
• Doping (additives) 15%
• Silica 14%
• Magnetic fields 12%
• Temperature 5%

Chemical Compounds

• Disorder 60%
• Semiconductor 53%
• Monolayer 52%
• Electron Particle 38%
• Silicon Dioxide 17%
• Boron Nitride 15%
• Magnetic Field 13%
• Electron Density 12%
• Dielectric Material 12%
• Electron Spin 11%
• Hexagonal Space Group 11%
• Transition Element 10%
• Environment 8%
• Time 5%

Physics & Astronomy

• valleys 70%
• disorders 54%
• electrons 29%
• boron nitrides 10%
• transition metals 8%
• relaxation time 7%
• silicon dioxide 7%
• magnetic fields 5%