Use of silicon nitride in buried contact solar cells

Bernhard Vogl, Alexander M. Slade, Stephen C. Pritchard, Mark Gross, Christiana B. Honsberg, Jeffrey E. Cotter, Stuart R. Wenham

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Silicon nitride offers many potential benefits to the family of buried contact fabrication sequences including improved design flexibility and efficiency. The main device structures of the buried contact family comprise the standard buried contact, the simplified buried contact and the double-sided buried contact cells. The physical properties of silicon nitride allow it to be used for surface passivation, as an anti-reflection coating, as a diffusion source material and as a masking dielectric. The use of silicon nitride in each buried contact fabrication sequence is described in this work.

Original languageEnglish (US)
Pages (from-to)17-25
Number of pages9
JournalSolar Energy Materials and Solar Cells
Issue number1-4
StatePublished - Feb 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films


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