Unraveling the structural and electronic properties of strained PbSe on GaAs

X. Liu; J. Wang; L. Riney; S. K. Bac; David J. Smith; M. R. McCartney; I. Khan; A. J. Hoffman; M. Dobrowolska; J. K. Furdyna; B. A. Assaf

doi:10.1016/j.jcrysgro.2021.126235

Unraveling the structural and electronic properties of strained PbSe on GaAs

X. Liu, J. Wang, L. Riney, S. K. Bac, David J. Smith, M. R. McCartney, I. Khan, A. J. Hoffman, M. Dobrowolska, J. K. Furdyna, B. A. Assaf

Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Thin films of PbSe have been synthesized by molecular beam epitaxy on both GaAs(1 0 0) and GaAs(1 1 1)B substrates. Despite the smaller lattice constant of GaAs, the PbSe layers are (0 0 1)-oriented and undergo in-plane tensile strain on both substrates due to the thermal expansion coefficient mismatch between the materials. High resolution transmission electron microscopy observations reveal an abrupt and highly crystalline interface, not impacted by the tensile strain. The impact of strain on the electronic band structure is computed and found to induce an increase in the energy gap by as much as 10%.

Original language	English (US)
Article number	126235
Journal	Journal of Crystal Growth
Volume	570
DOIs	https://doi.org/10.1016/j.jcrysgro.2021.126235
State	Published - Sep 15 2021

Keywords

A1. Interfaces
A1. Transmission Electron Microscopy
A1. X-ray Diffraction
A3. Molecular beam epitaxy
B2. Semiconducting lead compounds
B2. Topological insulators

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2021.126235

Cite this

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title = "Unraveling the structural and electronic properties of strained PbSe on GaAs",

abstract = "Thin films of PbSe have been synthesized by molecular beam epitaxy on both GaAs(1 0 0) and GaAs(1 1 1)B substrates. Despite the smaller lattice constant of GaAs, the PbSe layers are (0 0 1)-oriented and undergo in-plane tensile strain on both substrates due to the thermal expansion coefficient mismatch between the materials. High resolution transmission electron microscopy observations reveal an abrupt and highly crystalline interface, not impacted by the tensile strain. The impact of strain on the electronic band structure is computed and found to induce an increase in the energy gap by as much as 10%.",

keywords = "A1. Interfaces, A1. Transmission Electron Microscopy, A1. X-ray Diffraction, A3. Molecular beam epitaxy, B2. Semiconducting lead compounds, B2. Topological insulators",

author = "X. Liu and J. Wang and L. Riney and Bac, {S. K.} and Smith, {David J.} and McCartney, {M. R.} and I. Khan and Hoffman, {A. J.} and M. Dobrowolska and Furdyna, {J. K.} and Assaf, {B. A.}",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = sep,

day = "15",

doi = "10.1016/j.jcrysgro.2021.126235",

language = "English (US)",

volume = "570",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Unraveling the structural and electronic properties of strained PbSe on GaAs

AU - Liu, X.

AU - Wang, J.

AU - Riney, L.

AU - Bac, S. K.

AU - Smith, David J.

AU - McCartney, M. R.

AU - Khan, I.

AU - Hoffman, A. J.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

AU - Assaf, B. A.

PY - 2021/9/15

Y1 - 2021/9/15

N2 - Thin films of PbSe have been synthesized by molecular beam epitaxy on both GaAs(1 0 0) and GaAs(1 1 1)B substrates. Despite the smaller lattice constant of GaAs, the PbSe layers are (0 0 1)-oriented and undergo in-plane tensile strain on both substrates due to the thermal expansion coefficient mismatch between the materials. High resolution transmission electron microscopy observations reveal an abrupt and highly crystalline interface, not impacted by the tensile strain. The impact of strain on the electronic band structure is computed and found to induce an increase in the energy gap by as much as 10%.

AB - Thin films of PbSe have been synthesized by molecular beam epitaxy on both GaAs(1 0 0) and GaAs(1 1 1)B substrates. Despite the smaller lattice constant of GaAs, the PbSe layers are (0 0 1)-oriented and undergo in-plane tensile strain on both substrates due to the thermal expansion coefficient mismatch between the materials. High resolution transmission electron microscopy observations reveal an abrupt and highly crystalline interface, not impacted by the tensile strain. The impact of strain on the electronic band structure is computed and found to induce an increase in the energy gap by as much as 10%.

KW - A1. Interfaces

KW - A1. Transmission Electron Microscopy

KW - A1. X-ray Diffraction

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting lead compounds

KW - B2. Topological insulators

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U2 - 10.1016/j.jcrysgro.2021.126235

DO - 10.1016/j.jcrysgro.2021.126235

M3 - Article

AN - SCOPUS:85109485482

SN - 0022-0248

VL - 570

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

M1 - 126235

ER -

Unraveling the structural and electronic properties of strained PbSe on GaAs

Abstract

Keywords

ASJC Scopus subject areas

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