Understanding ion-milling damage in Hg 1-xCd xTe epilayers

Changzhen Wang, David Smith, Steve Tobin, Themis Parodos, Jun Zhao, Yong Chang, Sivalingam Sivananthan

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


Transmission electron microscopy (TEM) is widely used for the characterization of the microstructure of Hg1-x Cdx Te epilayers. Traditional TEM sample preparation methods, which usually involve argon ion milling, can easily cause damage to the material, and the size and density of the induced defects depend on the milling conditions. In this work, the structural damage caused by argon ion milling of Hg1-x Cdx Te epilayers has been investigated. Multilayer samples with different Hg concentrations, as grown by molecular beam epitaxy, and p-n heterojunctions, as grown by liquid-phase epitaxy, have been examined. It is shown that, in addition to the milling conditions, the extent of the ion-induced damage depends sensitively on the Hg concentration of the Hg1-x Cdx Te alloy as well as the epilayer growth conditions (i.e., Hg rich or Te rich). A possible mechanism that explains these results is briefly discussed.

Original languageEnglish (US)
Article number110604JVA
Pages (from-to)995-1000
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
StatePublished - Jul 2006

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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