Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation

Pradyumna Muralidharan; Stephen M. Goodnick; Dragica Vasileska

doi:10.1109/PVSC40753.2019.8980625

Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation

Pradyumna Muralidharan, Stephen M. Goodnick, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Passivation layers based on hydrogenated amorphous silicon (a-Si:H) have enabled silicon heterojunction solar cells to achieve high fill factors and conversion efficiencies. Traditionally, intrinsic a-Si:H(i) provides passivation between the doped a-Si and c-Si. However, studies have shown that there is a 2mA/cm² optical loss associated with this layer. In this paper we explore the option of using a-SiO_x:H(i) as a passivation layer as oxygen can used to create a passivation layer with a wider bandgap. We utilize an in-house kinetic Monte Carlo solver to simulate defect assisted transport across the heterointerface and the passivation layer. Our simulations show a strong correlation between multi-phonon transitions and overall device performance.

Original language	English (US)
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	314-316
Number of pages	3
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980625
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: Jun 16 2019 → Jun 21 2019

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	6/16/19 → 6/21/19

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC40753.2019.8980625

Cite this

Muralidharan, P., Goodnick, S. M., & Vasileska, D. (2019). Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 314-316). Article 8980625 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980625

Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation. / Muralidharan, Pradyumna; Goodnick, Stephen M.; Vasileska, Dragica.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 314-316 8980625 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Muralidharan, P, Goodnick, SM & Vasileska, D 2019, Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980625, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 314-316, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 6/16/19. https://doi.org/10.1109/PVSC40753.2019.8980625

Muralidharan P, Goodnick SM , Vasileska D. Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 314-316. 8980625. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8980625

Muralidharan, Pradyumna ; Goodnick, Stephen M. ; Vasileska, Dragica. / Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation. 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 314-316 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{026f7d4ebdef4ef9a22ee608a4ee4ba2,

title = "Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation",

abstract = "Passivation layers based on hydrogenated amorphous silicon (a-Si:H) have enabled silicon heterojunction solar cells to achieve high fill factors and conversion efficiencies. Traditionally, intrinsic a-Si:H(i) provides passivation between the doped a-Si and c-Si. However, studies have shown that there is a 2mA/cm2 optical loss associated with this layer. In this paper we explore the option of using a-SiOx:H(i) as a passivation layer as oxygen can used to create a passivation layer with a wider bandgap. We utilize an in-house kinetic Monte Carlo solver to simulate defect assisted transport across the heterointerface and the passivation layer. Our simulations show a strong correlation between multi-phonon transitions and overall device performance.",

author = "Pradyumna Muralidharan and Goodnick, {Stephen M.} and Dragica Vasileska",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8980625",

language = "English (US)",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "314--316",

booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",

note = "46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

}

TY - GEN

T1 - Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation

AU - Muralidharan, Pradyumna

AU - Goodnick, Stephen M.

AU - Vasileska, Dragica

PY - 2019/6

Y1 - 2019/6

N2 - Passivation layers based on hydrogenated amorphous silicon (a-Si:H) have enabled silicon heterojunction solar cells to achieve high fill factors and conversion efficiencies. Traditionally, intrinsic a-Si:H(i) provides passivation between the doped a-Si and c-Si. However, studies have shown that there is a 2mA/cm2 optical loss associated with this layer. In this paper we explore the option of using a-SiOx:H(i) as a passivation layer as oxygen can used to create a passivation layer with a wider bandgap. We utilize an in-house kinetic Monte Carlo solver to simulate defect assisted transport across the heterointerface and the passivation layer. Our simulations show a strong correlation between multi-phonon transitions and overall device performance.

AB - Passivation layers based on hydrogenated amorphous silicon (a-Si:H) have enabled silicon heterojunction solar cells to achieve high fill factors and conversion efficiencies. Traditionally, intrinsic a-Si:H(i) provides passivation between the doped a-Si and c-Si. However, studies have shown that there is a 2mA/cm2 optical loss associated with this layer. In this paper we explore the option of using a-SiOx:H(i) as a passivation layer as oxygen can used to create a passivation layer with a wider bandgap. We utilize an in-house kinetic Monte Carlo solver to simulate defect assisted transport across the heterointerface and the passivation layer. Our simulations show a strong correlation between multi-phonon transitions and overall device performance.

UR - http://www.scopus.com/inward/record.url?scp=85081598318&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85081598318&partnerID=8YFLogxK

U2 - 10.1109/PVSC40753.2019.8980625

DO - 10.1109/PVSC40753.2019.8980625

M3 - Conference contribution

AN - SCOPUS:85081598318

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 314

EP - 316

BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation

Abstract

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