Passivation layers based on hydrogenated amorphous silicon (a-Si:H) have enabled silicon heterojunction solar cells to achieve high fill factors and conversion efficiencies. Traditionally, intrinsic a-Si:H(i) provides passivation between the doped a-Si and c-Si. However, studies have shown that there is a 2mA/cm2 optical loss associated with this layer. In this paper we explore the option of using a-SiOx:H(i) as a passivation layer as oxygen can used to create a passivation layer with a wider bandgap. We utilize an in-house kinetic Monte Carlo solver to simulate defect assisted transport across the heterointerface and the passivation layer. Our simulations show a strong correlation between multi-phonon transitions and overall device performance.
|Title of host publication
|2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
|Institute of Electrical and Electronics Engineers Inc.
|Number of pages
|Published - Jun 2019
|46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019 → Jun 21 2019
|Conference Record of the IEEE Photovoltaic Specialists Conference
|46th IEEE Photovoltaic Specialists Conference, PVSC 2019
|6/16/19 → 6/21/19
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering