@article{f828484a86e34739a6b7439ccdbc6daf,
title = "Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges",
abstract = "Ultrawide-bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures-of-merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower-bandgap cousins in high-power and RF electronics, as well as in deep-UV optoelectronics, quantum information, and extreme-environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al-content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near-term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.",
keywords = "UV-C, aluminum nitride, boron nitride, diamond, extreme environments, gallium oxide, power electronics, ultrawide bandgaps",
author = "Tsao, {J. Y.} and S. Chowdhury and Hollis, {M. A.} and D. Jena and Johnson, {N. M.} and Jones, {K. A.} and Kaplar, {R. J.} and S. Rajan and {Van de Walle}, {C. G.} and E. Bellotti and Chua, {C. L.} and R. Collazo and Coltrin, {M. E.} and Cooper, {J. A.} and Evans, {K. R.} and S. Graham and Grotjohn, {T. A.} and Heller, {E. R.} and M. Higashiwaki and Islam, {M. S.} and Juodawlkis, {P. W.} and Khan, {M. A.} and Koehler, {A. D.} and Leach, {J. H.} and Mishra, {U. K.} and Robert Nemanich and Pilawa-Podgurski, {R. C.N.} and Shealy, {J. B.} and Z. Sitar and Tadjer, {M. J.} and Witulski, {A. F.} and M. Wraback and Simmons, {J. A.}",
note = "Funding Information: We gratefully acknowledge all of the participants of the April 24–25, 2016 workshop held in Arlington, VA: Carol Adkins, Sandia National Laboratories; Anant Agarwal, DOE EERE; Andrew Allerman, Sandia National Laboratories; Travis Anderson, Naval Research Laboratory; Andy Armstrong, Sandia National Laboratories; Enrico Bellotti, Boston University; John Belvins, Air Force Research Laboratory; Karim Boutros, STMicroelectronics; Sukwon Choi, Pennsylvania State University; Srabanti Chowdhury, University of California, Davis; Aris Christou, University of Maryland; Alyssa Kolski, Sandia National Laboratories; Marty Chumbes, Raytheon Corporation; Robert Coffie, RLC Solutions; Ramon Collazo, North Carolina State University; Sarit Dhar, Auburn University; Don Dorsey, Air Force Research Laboratory; Samir El-Ghazaly, National Science Foundation; Mark Goorsky, University of California, Los Angeles; Kenneth Goretta, Air Force Office of Scientific Research; Samuel Graham, Georgia Institute of Technology; Dan Green, DARPA/MTO; Timothy Grotjohn, Michigan State University; Eric Heller, Air Force Research Laboratory; Asegun Henry, Georgia Institute of Technology; Masataka Higashiwaki, National Institute of Information and Communications Technology; Karl Hobart, Naval Research Laboratory; Mark Hollis, MIT Lincoln Laboratory; Jinwoo Hwang, Ohio State University; Debdeep Jena, Cornell University; Gregg Jessen, Air Force Research Laboratory/ RYDD; Noble Johnson, PARC; Ken Jones, Army Research Laboratory/ SEDD; Bob Kaplar, Sandia National Laboratories; Asif Khan, University of South Carolina; Jacob Khurgin, Johns Hopkins University; Manos Kioupakis, University of Michigan; Isik Kizilyalli, DOE ARPA-E; Andrew Koehler, Naval Research Laboratory; Fritz Kub, Naval Research Laboratory; Marcelo Kuroda, Auburn University; Jeff LaRoche, Raytheon Corporation; Jacob Leach, Kyma Technologies, Inc.; Aivars Lelis, Army Research Laboratory; Pat Lenahan, Pennsylvania State University; Lauren Manzanares, Sandia National Laboratories; Kaiser Matin, DARPA/MTO; David Meyer, Naval Research Laboratory; Umesh Mishra, University of California, Santa Barbara; Suzanne Mohney, Pennsylvania State University; Baxter Moody, Hexatech Inc.; Shin Mou, Air Force Research Laboratory; Robert Nemanich, Arizona State University; Rebecca Nikolic, Lawrence Livermore National Laboratory; Tomas Palacios, Massachusetts Institute of Technology; Dimitris Pavlidis, National Science Foundation; Lynn Petersen, Office of Naval Research; Robert Pilawa, University of Illinois, Urbana-Champaign; Matthew Porter, Naval Postgraduate School; Q Joe Qiu, Army Research Office; Siddharth Rajan, Ohio State University; Steve Ringel, Ohio State University; Ali Sayir, Air Force Office of Scientific Research; John Schlueter, National Science Foundation; Max Shatalov, Sensor Electronic Technology, Inc.; Jerry Simmons, Sandia National Laboratories; Zlatko Sitar, North Carolina State University; Jim Speck, University of California, Santa Barbara; Marko Tadjer, Naval Research Laboratory; Daren Thomson, Air Force Research Laboratory/ RYDH; Randy Tompkins, Army Research Laboratory; Jeff Tsao, Sandia National Laboratories; Chris Van de Walle, University of California, Santa Barbara; Todd Weatherford, Naval Postgraduate School; Jonathan Wierer, Lehigh University; Jim Will, DOE, NNSA{\textquoteright}s National Security Campus, Kansas City; Arthur Witluski, Institute for Space & Defense Electronics-Vanderbilt; Mike Wraback, Army Research Laboratory; Hongping Zhao, Case Western Reserve University. Funding Information: This work was partially supported by the Laboratory Directed Research and Development Program at Sandia National Laboratories, a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the United States Department of Energy{\textquoteright}s National Nuclear Security Administration under Contract No. DE-NA-0003525. This material is based upon work supported by the Assistant Secretary of Defense for Research and Engineering under Air Force Contract No. FA8721-05-C-0002 and/or FA8702-15-D-0001 at MIT Lincoln Laboratory. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the Assistant Secretary of Defense for Research and Engineering. Funding Information: We acknowledge support from the National Science Foundation (NSF, Dimitris Pavlidis), the Army Research Office (ARO, Joe Qiu), the Air Force Office of Scientific Research (AFOSR, Ken Goretta), and Sandia National Laboratories (SNL, Olga Spahn). Financial and logistical support was provided by NSF (Workshop Award No. ECCS-1641056) and AFOSR. We thank the staff at the Basic Research Innovation and Collaboration Center/Virginia Tech Applied Research Corporation for hosting the workshop. We thank, at Sandia: Clare Amann for superb technical editing support, and Alyssa Kolski and Lauren Manzanares for workshop logistic support. We thank Gregg Jessen (Air Force Research Laboratory/RYDD), David Meyer (Naval Research Laboratory) and Baxter Moody (Hexatech Inc.) for help with the materials and properties tables, and B. Jayant Baliga (North Carolina State University) for helpful tips on breakdown data for SiC and GaN. Chris Van de Walle acknowledges support by NSF under grant No. DMR-1434854. Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",
year = "2018",
month = jan,
doi = "10.1002/aelm.201600501",
language = "English (US)",
volume = "4",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",
number = "1",
}