@inproceedings{40c60efe7aca469cb385fa224638d158,
title = "Ultra-thin GaAs single-junction solar cells integrated with lattice-matched ZnSe as a reflective back scattering layer",
abstract = "This paper proposes the use of a monolithically integrated back scattering layer to improve the efficiency of ultra-thin GaAs single-junction solar cells. The device consists of a double-heterostructure GaAs/InGaP single-junction solar cell integrated with a lattice-matched ZnSe layer etched as the back scattering layer coated with a highly reflective Au film and flip-chip bonded on a carrier substrate. ZnSe surface was roughened to form different textures by wet etching. Without anti-reflective coating, 300×300 μm2 devices with a 300 nm GaAs active region and a reflective ZnSe/Au back scattering layer, demonstrate a short-circuit current density of 17.2 mA/cm 2, an open-circuit voltage of 0.915 V, and a power conversion efficiency of 11.8% under 1 sun solar radiation (AM 1.5G, 0.1 W/cm2). External quantum efficiency (EQE) measurements show EQE over 65% at 400 nm and 30% at 850 nm.",
keywords = "GaAs, Single-junction solar cells, ZeSe, light scattering, photovoltaic cells",
author = "Weiquan Yang and Charles Allen and Li, {Jing Jing} and Hector Cotal and Christopher Fetzer and Shi Liu and Ding Ding and Stuart Farrell and Zhaoyu He and Hua Li and Hank Dettlaff and Nasser Karam and Yong-Hang Zhang",
year = "2012",
doi = "10.1109/PVSC.2012.6317766",
language = "English (US)",
isbn = "9781467300643",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "978--981",
booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",
note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",
}