Ultra-submicrometer microwave GaAs MESFETs and HEMTs

J. H. Han, J. M. Ryan, A. M. Kriman, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Ultra-submicron gate GaAs MESFETs and AlGaAs/GaAs HEMTs have been fabricated in an electronbeam lithographic process with gate lengths varying from 25 to 80 nm. For gate length less than 100 nm, electrical characteristics deteriorate due to fringing capacitance at a low aspect ratio. Velocity overshoot is observed for gate length shorter than about 55 nm. The maximum effective electron saturation velocity obtained is 3×107 cm/sec for a 30 nm HEMT. A maximum fT value of 167 GHz was obtained for a 37.5 nm MESFET.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Number of pages8
ISBN (Print)0819403393, 9780819403391
StatePublished - 1990
EventHigh-Speed Electronics and Device Scaling - San Diego, CA, USA
Duration: Mar 18 1990Mar 19 1990

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherHigh-Speed Electronics and Device Scaling
CitySan Diego, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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