We discuss a full three-dimensional model of an ultra-small MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. The inclusion of the proper Coulomb interaction affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device. We find that the short-range e-e and e-i terms, combined with discrete impurity effects, is also needed for accurate measurement of the device threshold voltage.
- Device modeling
- Direct Coulomb interaction
- Discrete impurities
ASJC Scopus subject areas
- Hardware and Architecture
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering