Two-Step Process for Direct Synthesis of Gallium Nitride Powders

Fernando Ponce (Inventor)

Research output: Patent


ASU researchers have developed a method for producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and a full reaction, yielding high purity crystalline GaN powders with a stoichiometroc nitrogen concentration and a hexagonal wurtzite structure. These powders are well suited for use in electroluminescent devices.
Original languageEnglish (US)
StatePublished - Sep 25 2003


Dive into the research topics of 'Two-Step Process for Direct Synthesis of Gallium Nitride Powders'. Together they form a unique fingerprint.

Cite this