Abstract
Deep-level transient spectroscopy measurements in InAs quantum dots (QDs) grown in both n-GaAs and p-GaAs show that tunneling is an important mechanism of carrier escape from the dots. The doping level in the barrier strongly affects the tunneling emission rates, enabling or preventing the detection of a transient capacitance signal from a given QD level. The relative intensity of this signal acquired with different rate windows allows the estimation of tunneling emission energies.
Original language | English (US) |
---|---|
Pages (from-to) | 2013-2015 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 13 |
DOIs | |
State | Published - Sep 24 2001 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)