Tungsten-titanium diffusion barriers for silver metallization

Shekhar Bhagat, Hauk Han, Terry Alford

Research output: Contribution to journalArticlepeer-review

52 Scopus citations


Diffusion barrier properties and thermal stability of reactive sputtered W-Ti films between Ag and Si were studied using X-ray diffractometry, X-ray fluorescence spectrometry, Rutherford backscattering spectrometry, four point probe analysis, and field emission scanning electron microscopy. These films were annealed in vacuum at different temperatures for 1 h. Silver layers were found to be stable up to 600 °C; after which, Ag agglomerated at 700 °C. Rutherford backscattering analysis showed that interfacial reactions took place at temperatures higher than 400 °C. Four point probe resistivity measurements showed that the films were stable up to 600 °C. At 700 °C the resistivity increased abnormally. These results support further investigation of W-Ti films as a potential barrier layer for Ag metallization in the high temperature electronics.

Original languageEnglish (US)
Pages (from-to)1998-2002
Number of pages5
JournalThin Solid Films
Issue number4
StatePublished - Dec 5 2006


  • Diffusion barrier
  • Silver metallization
  • Titanium
  • Tungsten

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Tungsten-titanium diffusion barriers for silver metallization'. Together they form a unique fingerprint.

Cite this