Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates

Matthew R. Bauer, John Tolle, Corey Bungay, Andrew Chizmeshya, David Smith, Jose Menendez, John Kouvetakis

Research output: Contribution to journalArticlepeer-review

66 Scopus citations


Novel chemical methods based on deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow SnxGe1-x alloys directly on silicon. Device-quality, strain-free films with a Sn-fraction as high as x = 0.2 were obtained. The optical properties provide evidence for a well-defined Ge-like band structure. In particular, the direct band gap E0 is reduced to a value as low as 0.41 eV for Sn0.14Ge0.86. The growth of these high-optical quality infrared materials creates entirely new opportunities for band gap engineering on Si.

Original languageEnglish (US)
Pages (from-to)355-359
Number of pages5
JournalSolid State Communications
Issue number5
StatePublished - Jul 2003


  • A. Semiconductors
  • B. Epitaxy
  • C. Alloys

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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