Three-dimensional (3D) statistical simulation is presented to propose using triple-gate (TG) fin field effect transistors (FinFETs) with optimized fin-thickness (Tsi) to reduce the fin line edge roughness (LER) effect both in the device and circuit level. The results show that ultrathin fin will lead to intolerable parameter fluctuations in 20nm double-gate (DG) FinFETs and FinFETs static random access memory (SRAM). Increasing T si can alleviate fin LER effect, but in the meantime it will exacerbate the short channel effect (SCE). TG structure can strengthen the gate controllability over the channel, thus, can suppress SCE and reduce LER effect as well. Adopting TG structure can relax the constraint of fin-thickness to half the gate length.
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy