Transport of the photoexcited electron-hole plasma in InP

Kong-Thon Tsen, G. Halama, O. F. Sankey, S. C Y Tsen

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Transport properties of the photoexcited electron-hole plasma in n-type InP have been studied by the spatial-imaged, time-resolved Raman scattering technique with 30μm and 0.1μm spatial resolution for lateral and perpendicular transport, respectively, and on a picosecond time scale. The plasma density ranging from 1 × 1016 to 2 × 1017 cm-3 was deduced from fitting of the Raman spectra with the plasmon-LO phonon scattering theory which took into account the contributions from free holes. In contrast to the experimental results of Young and Wan who found that ordinary diffusion equation was sufficient to fit their transient plasma density-time profiles in semi-insulating InP, our experimental measurements have shown that perpendicular transport (i.e., expansion into the bulk crystal) of the plasma in n-type InP can be very well described by a modified diffusion equation including the effect of drifting away from the surface based on a hydrodynamic model. The transient plasma density-time profiles were studied at T = 300K and for an initial injected plasma density n {reversed tilde equals} 2 × 1017 cm-3. The plasma has been found to expand laterally at a velocity V {reversed tilde equals} 5 × 104 cm/sec and perpendicularly into the crystal at a velocity Vp {reversed tilde equals} 1.5 × 105 cm/sec.

Original languageEnglish (US)
Pages (from-to)1331-1335
Number of pages5
JournalSolid State Electronics
Issue number12
StatePublished - Dec 1989


  • Raman spectroscopy
  • Time-resolved
  • electron -hole plasma
  • spatial-imaged
  • transport properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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