Abstract
The transient behavior of a resonant-tunneling diode (RTD) arising from switching the applied bias from the peak to the valley of the I- V curve requires a fully quantum mechanical model with a self-consistent solution of the potential. Ballistic behavior and plasma oscillations of the electrons contribute to large oscillations in the transient current. The ballistic inertia of the electrons provides a large inductive reactance, which couples to the capacitive charging and discharging of the quantum well.
Original language | English (US) |
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Pages (from-to) | 457-459 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 9 |
Issue number | 9 |
DOIs | |
State | Published - Sep 1988 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering