Transient Switching Behavior of the Resonant-Tunneling Diode

N. C. Kluksdahl, A. M. Kriman, David K. Ferry, Christian Ringhofer

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


The transient behavior of a resonant-tunneling diode (RTD) arising from switching the applied bias from the peak to the valley of the I- V curve requires a fully quantum mechanical model with a self-consistent solution of the potential. Ballistic behavior and plasma oscillations of the electrons contribute to large oscillations in the transient current. The ballistic inertia of the electrons provides a large inductive reactance, which couples to the capacitive charging and discharging of the quantum well.

Original languageEnglish (US)
Pages (from-to)457-459
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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