Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor

Kong-Thon Tsen; D. K. Ferry; Jye Shyang Wang; Chao Hsiung Huang; Hao Hsiung Lin

doi:10.1063/1.117211

Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor

Kong-Thon Tsen, D. K. Ferry, Jye Shyang Wang, Chao Hsiung Huang, Hao Hsiung Lin

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Abstract

Transient electron transport in an InP p-i-n nanostructure semiconductor has been studied by subpicosecond Raman spectroscopy at T=300 K. Both the nonequilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP.

Original language	English (US)
Pages (from-to)	3575-3577
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	23
DOIs	https://doi.org/10.1063/1.117211
State	Published - Dec 2 1996

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Physics and Astronomy (miscellaneous)

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10.1063/1.117211

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title = "Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor",

abstract = "Transient electron transport in an InP p-i-n nanostructure semiconductor has been studied by subpicosecond Raman spectroscopy at T=300 K. Both the nonequilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP.",

author = "Kong-Thon Tsen and Ferry, {D. K.} and Wang, {Jye Shyang} and Huang, {Chao Hsiung} and Lin, {Hao Hsiung}",

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T1 - Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor

AU - Tsen, Kong-Thon

AU - Ferry, D. K.

AU - Wang, Jye Shyang

AU - Huang, Chao Hsiung

AU - Lin, Hao Hsiung

PY - 1996/12/2

Y1 - 1996/12/2

N2 - Transient electron transport in an InP p-i-n nanostructure semiconductor has been studied by subpicosecond Raman spectroscopy at T=300 K. Both the nonequilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP.

AB - Transient electron transport in an InP p-i-n nanostructure semiconductor has been studied by subpicosecond Raman spectroscopy at T=300 K. Both the nonequilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP.

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JO - Applied Physics Letters

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Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor

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