@inproceedings{d201885b69214fe98d203f95c01c4ef8,
title = "Transient response exploration of SRAM cell metastable states caused by ionizing radiation with 3D mixed mode simulation",
abstract = "This paper reports on the simulation and experimental results examining the interaction between mismatch and soft-errors in SRAM cells. Multiple bit upsets (MBU) due to ion irradiation are measured and show a significant probability of not upsetting otherwise identical cells, including the stored state. In order to understand this behavior, we use 3D device simulations and show that they may be due to the cells being driven metastable by radiation induced collected charge, whence the final state is strongly determined by the circuit mismatch within the cell.",
keywords = "3D simulation, Ionizing particle, Meta-stable state, Mismatch, Multiple Bit Upset, SRAM",
author = "A. Privat and Clark, {L. T.} and Hugh Barnaby",
year = "2015",
month = feb,
day = "25",
doi = "10.1109/ICECS.2014.7050017",
language = "English (US)",
series = "2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "443--446",
booktitle = "2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014",
note = "2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014 ; Conference date: 07-12-2014 Through 10-12-2014",
}