Transient picosecond/subpicosecond Raman scattering studies of nonequilibrium electron distributions and phonons in CdTe

E. Grann; Y. Chen; Kong-Thon Tsen; D. K. Ferry; T. Almeida; Y. P. Chen; J. P. Faurie; S. Sivananthan

doi:10.1063/1.363338

Transient picosecond/subpicosecond Raman scattering studies of nonequilibrium electron distributions and phonons in CdTe

E. Grann, Y. Chen, Kong-Thon Tsen, D. K. Ferry, T. Almeida, Y. P. Chen, J. P. Faurie, S. Sivananthan

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Abstract

Nonequilibrium electron distributions and phonons in CdTe have been studied by transient picosecond/subpicosecond Raman spectroscopy at T = 300 K. Our experimental results show that for photoexcited electron-hole density of n ≅ 10¹⁸ cm^-3, the electron distributions can be reasonably well described by Fermi-Dirac distribution functions with effective electron temperature substantially higher than the lattice temperature. From an ensemble Monte Carlo analysis of the nonequilibrium phonon population as a function of photoexcited electron-hole pair density, the LO phonon lifetime in CdTe has been deduced to be τ≅0.75±0.25 ps.

Original language	English (US)
Pages (from-to)	3840-3843
Number of pages	4
Journal	Journal of Applied Physics
Volume	80
Issue number	7
DOIs	https://doi.org/10.1063/1.363338
State	Published - Oct 1 1996

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Physics and Astronomy(all)

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title = "Transient picosecond/subpicosecond Raman scattering studies of nonequilibrium electron distributions and phonons in CdTe",

abstract = "Nonequilibrium electron distributions and phonons in CdTe have been studied by transient picosecond/subpicosecond Raman spectroscopy at T = 300 K. Our experimental results show that for photoexcited electron-hole density of n ≅ 1018 cm-3, the electron distributions can be reasonably well described by Fermi-Dirac distribution functions with effective electron temperature substantially higher than the lattice temperature. From an ensemble Monte Carlo analysis of the nonequilibrium phonon population as a function of photoexcited electron-hole pair density, the LO phonon lifetime in CdTe has been deduced to be τ≅0.75±0.25 ps.",

author = "E. Grann and Y. Chen and Kong-Thon Tsen and Ferry, {D. K.} and T. Almeida and Chen, {Y. P.} and Faurie, {J. P.} and S. Sivananthan",

year = "1996",

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doi = "10.1063/1.363338",

language = "English (US)",

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T1 - Transient picosecond/subpicosecond Raman scattering studies of nonequilibrium electron distributions and phonons in CdTe

AU - Grann, E.

AU - Chen, Y.

AU - Tsen, Kong-Thon

AU - Ferry, D. K.

AU - Almeida, T.

AU - Chen, Y. P.

AU - Faurie, J. P.

AU - Sivananthan, S.

PY - 1996/10/1

Y1 - 1996/10/1

N2 - Nonequilibrium electron distributions and phonons in CdTe have been studied by transient picosecond/subpicosecond Raman spectroscopy at T = 300 K. Our experimental results show that for photoexcited electron-hole density of n ≅ 1018 cm-3, the electron distributions can be reasonably well described by Fermi-Dirac distribution functions with effective electron temperature substantially higher than the lattice temperature. From an ensemble Monte Carlo analysis of the nonequilibrium phonon population as a function of photoexcited electron-hole pair density, the LO phonon lifetime in CdTe has been deduced to be τ≅0.75±0.25 ps.

AB - Nonequilibrium electron distributions and phonons in CdTe have been studied by transient picosecond/subpicosecond Raman spectroscopy at T = 300 K. Our experimental results show that for photoexcited electron-hole density of n ≅ 1018 cm-3, the electron distributions can be reasonably well described by Fermi-Dirac distribution functions with effective electron temperature substantially higher than the lattice temperature. From an ensemble Monte Carlo analysis of the nonequilibrium phonon population as a function of photoexcited electron-hole pair density, the LO phonon lifetime in CdTe has been deduced to be τ≅0.75±0.25 ps.

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Transient picosecond/subpicosecond Raman scattering studies of nonequilibrium electron distributions and phonons in CdTe

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