Abstract
Authors compute the transient response of gallium arsenide submicron two terminal devices and examine their load line dependence.
Original language | English (US) |
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Title of host publication | Advances in Chemistry Series |
Place of Publication | New York, NY |
Publisher | IEEE |
Pages | 394-397 |
Number of pages | 4 |
State | Published - 1979 |
Externally published | Yes |
Event | Int Electron Devices Meet, 25th, Tech Dig - Washington, DC, USA Duration: Dec 3 1979 → Dec 5 1979 |
Other
Other | Int Electron Devices Meet, 25th, Tech Dig |
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City | Washington, DC, USA |
Period | 12/3/79 → 12/5/79 |
ASJC Scopus subject areas
- Engineering(all)