Towards the global modeling of InGaAs-based pseudomorphic HEMTs

Jay S. Ayubi-Moak; R. Akis; D. K. Ferry; Stephen Goodnick; N. Faralli; Marco Saraniti

doi:10.1007/s10825-008-0207-5

Towards the global modeling of InGaAs-based pseudomorphic HEMTs

Jay S. Ayubi-Moak, R. Akis, D. K. Ferry, Stephen Goodnick, N. Faralli, Marco Saraniti

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We utilize a 3D full-band Cellular Monte Car- lo (CMC) device simulator to model ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs). We present the static dc device characteristics and rf response for gate lengths ranging from 10 nm to 50 nm. Preliminary passive results using 3D full-wave Maxwell solver are also presented to illustrate the usefulness of and insight that a future coupled full-band/full-wave simulator will provide in more accurately, modeling the high frequency performance of p-HEMTs.

Original language	English (US)
Pages (from-to)	187-191
Number of pages	5
Journal	Journal of Computational Electronics
Volume	7
Issue number	3
DOIs	https://doi.org/10.1007/s10825-008-0207-5
State	Published - Feb 15 2008

Keywords

Millimeter-wave transistors
Monte Carlo methods
Pseudomorphic high-electron mobility transistors (p-HEMTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1007/s10825-008-0207-5

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abstract = "We utilize a 3D full-band Cellular Monte Car- lo (CMC) device simulator to model ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs). We present the static dc device characteristics and rf response for gate lengths ranging from 10 nm to 50 nm. Preliminary passive results using 3D full-wave Maxwell solver are also presented to illustrate the usefulness of and insight that a future coupled full-band/full-wave simulator will provide in more accurately, modeling the high frequency performance of p-HEMTs.",

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AU - Ayubi-Moak, Jay S.

AU - Akis, R.

AU - Ferry, D. K.

AU - Goodnick, Stephen

AU - Faralli, N.

AU - Saraniti, Marco

PY - 2008/2/15

Y1 - 2008/2/15

N2 - We utilize a 3D full-band Cellular Monte Car- lo (CMC) device simulator to model ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs). We present the static dc device characteristics and rf response for gate lengths ranging from 10 nm to 50 nm. Preliminary passive results using 3D full-wave Maxwell solver are also presented to illustrate the usefulness of and insight that a future coupled full-band/full-wave simulator will provide in more accurately, modeling the high frequency performance of p-HEMTs.

AB - We utilize a 3D full-band Cellular Monte Car- lo (CMC) device simulator to model ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs). We present the static dc device characteristics and rf response for gate lengths ranging from 10 nm to 50 nm. Preliminary passive results using 3D full-wave Maxwell solver are also presented to illustrate the usefulness of and insight that a future coupled full-band/full-wave simulator will provide in more accurately, modeling the high frequency performance of p-HEMTs.

KW - Millimeter-wave transistors

KW - Monte Carlo methods

KW - Pseudomorphic high-electron mobility transistors (p-HEMTs)

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Towards the global modeling of InGaAs-based pseudomorphic HEMTs

Abstract

Keywords

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