We utilize a 3D full-band Cellular Monte Car- lo (CMC) device simulator to model ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs). We present the static dc device characteristics and rf response for gate lengths ranging from 10 nm to 50 nm. Preliminary passive results using 3D full-wave Maxwell solver are also presented to illustrate the usefulness of and insight that a future coupled full-band/full-wave simulator will provide in more accurately, modeling the high frequency performance of p-HEMTs.

Original languageEnglish (US)
Pages (from-to)187-191
Number of pages5
JournalJournal of Computational Electronics
Issue number3
StatePublished - Feb 15 2008


  • Millimeter-wave transistors
  • Monte Carlo methods
  • Pseudomorphic high-electron mobility transistors (p-HEMTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering


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